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Non-GCA Modeling of near Threshold I...

Ren, Zhongjie.

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Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs./
作者:	Ren, Zhongjie.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	37 p.
附註:	Source: Masters Abstracts International, Volume: 82-02.
Contained By:	Masters Abstracts International82-02.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27838094
ISBN:	9798662451773

Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs.
Ren, Zhongjie.

Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 37 p.

Source: Masters Abstracts International, Volume: 82-02.

Thesis (M.S.)--University of California, San Diego, 2020.

This item must not be sold to any third party vendors.

It is well known that the velocity saturation behavior is not negligible in the shorter channel length and the gradual channel approximation (GCA) fails to generate reasonable I-V characterisitics of MOSFETs for both n = 1 and n = 2 models. Therefore, the non-GCA model has been developed to solve this issue by adding the ∆Q (Source-Drain induced part for mobile charges) term which is absent in the conventional GCA models and exhibits an excellent performance for above threshold region (Vgs-Vt>0.27V) modeling. However, the near threshold modeling (Vgs-Vt<0.1V) is not ideal in the previous non-GCA modelwith linear Qi(V) when compared with TCAD simulations owing to the failure of matching the Qi(V) (Gate induced part for mobile charges) profile in that region. In this work, a more rigerous non-GCA model with piecewise Qi(V) which can successfully approach I-V behaviors of DG MOSFETs in the near threshold region for n = 1 and n = 2 has been proposed by extending the continous, analytical GCA model of Qi(V) to obtain negative values. In addition, relative favorable above threshold I-V characteristics can be calculated by utilizing the proposed non-GCA model as well.

ISBN: 9798662451773Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Velocity saturation behavior

Non-GCA Modeling of near Threshold IV Characteristics of DG MOSFETs.
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300 $a 37 p.
500 $a Source: Masters Abstracts International, Volume: 82-02.
500 $a Advisor: Taur, Yuan.
502 $a Thesis (M.S.)--University of California, San Diego, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a It is well known that the velocity saturation behavior is not negligible in the shorter channel length and the gradual channel approximation (GCA) fails to generate reasonable I-V characterisitics of MOSFETs for both n = 1 and n = 2 models. Therefore, the non-GCA model has been developed to solve this issue by adding the ∆Q (Source-Drain induced part for mobile charges) term which is absent in the conventional GCA models and exhibits an excellent performance for above threshold region (Vgs-Vt>0.27V) modeling. However, the near threshold modeling (Vgs-Vt<0.1V) is not ideal in the previous non-GCA modelwith linear Qi(V) when compared with TCAD simulations owing to the failure of matching the Qi(V) (Gate induced part for mobile charges) profile in that region. In this work, a more rigerous non-GCA model with piecewise Qi(V) which can successfully approach I-V behaviors of DG MOSFETs in the near threshold region for n = 1 and n = 2 has been proposed by extending the continous, analytical GCA model of Qi(V) to obtain negative values. In addition, relative favorable above threshold I-V characteristics can be calculated by utilizing the proposed non-GCA model as well.
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650 4 $a Engineering. $3 586835
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653 $a Gradual channel approximation
653 $a MOSFETs
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