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2-D Melting in Excimer-Laser Irradia...

Wong, Vernon Keith.

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2-D Melting in Excimer-Laser Irradiated Polycrystalline Silicon Films.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	2-D Melting in Excimer-Laser Irradiated Polycrystalline Silicon Films./
作者:	Wong, Vernon Keith.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	183 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
Contained By:	Dissertations Abstracts International82-06B.
標題:	Materials science. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28257697
ISBN:	9798557002875

2-D Melting in Excimer-Laser Irradiated Polycrystalline Silicon Films.
Wong, Vernon Keith.

2-D Melting in Excimer-Laser Irradiated Polycrystalline Silicon Films. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 183 p.

Source: Dissertations Abstracts International, Volume: 82-06, Section: B.

Thesis (Ph.D.)--Columbia University, 2021.

This item must not be sold to any third party vendors.

This thesis examines the excimer-laser-induced melting of ELA-prepared silicon films using in situ transient reflectance and transmission analysis. The results clearly show that these polycrystalline films, which consist of columnar grains in contact with SiO2, can melt in a largely and remarkably 2-D manner. Based on the presently and previously obtained experimental results, as well as considering the thermal, thermodynamic, and kinetic aspects of the melting-transition-relevant details, we suggest a model that consists of grain-boundary-initiated melting, followed by lateral melting proceeding into the transiently superheated interior of the grains. Additional experiments are performed which demonstrate how this 2-D melting behavior at least stems intrinsically from the presence in the material of melt-prone grain boundaries and superheating-permitting Si/SiO2 interfaces. Next, the phase and temperature evolutions of the irradiated films are investigated using a numerical simulation program, which incorporates key material, thermodynamic, and kinetic parameters. We find that the center portion of the grains during (partial) melting (1) corresponds to, especially at the SiO2-passivated surface, the hottest regions of the films during rapid heating, and (2) remains entirely solid throughout the thickness of the film, as the maximum temperature sustained in these unmelted solids remains well below the superheating limit of silicon at the Si/SiO2 interface. Lastly, we discuss, and substantiate with results obtained from numerical simulations, the role that the manifested dimensionality of melting plays in dictating the efficiency with which the ELA crystallization technique can generate microstructurally uniform polycrystalline materials. The current discovery regarding the 2-D nature of melting should be recognized and appreciated as a critical process-enabling element for ELA, as the scenario permits microstructure evolution of the grains to take place in an effective manner.

ISBN: 9798557002875Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Excimer laser annealing

2-D Melting in Excimer-Laser Irradiated Polycrystalline Silicon Films.
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500 $a Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
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520 $a This thesis examines the excimer-laser-induced melting of ELA-prepared silicon films using in situ transient reflectance and transmission analysis. The results clearly show that these polycrystalline films, which consist of columnar grains in contact with SiO2, can melt in a largely and remarkably 2-D manner. Based on the presently and previously obtained experimental results, as well as considering the thermal, thermodynamic, and kinetic aspects of the melting-transition-relevant details, we suggest a model that consists of grain-boundary-initiated melting, followed by lateral melting proceeding into the transiently superheated interior of the grains. Additional experiments are performed which demonstrate how this 2-D melting behavior at least stems intrinsically from the presence in the material of melt-prone grain boundaries and superheating-permitting Si/SiO2 interfaces. Next, the phase and temperature evolutions of the irradiated films are investigated using a numerical simulation program, which incorporates key material, thermodynamic, and kinetic parameters. We find that the center portion of the grains during (partial) melting (1) corresponds to, especially at the SiO2-passivated surface, the hottest regions of the films during rapid heating, and (2) remains entirely solid throughout the thickness of the film, as the maximum temperature sustained in these unmelted solids remains well below the superheating limit of silicon at the Si/SiO2 interface. Lastly, we discuss, and substantiate with results obtained from numerical simulations, the role that the manifested dimensionality of melting plays in dictating the efficiency with which the ELA crystallization technique can generate microstructurally uniform polycrystalline materials. The current discovery regarding the 2-D nature of melting should be recognized and appreciated as a critical process-enabling element for ELA, as the scenario permits microstructure evolution of the grains to take place in an effective manner.
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