東華大學圖書館 |

Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory./
作者:	Niraula, Dipesh.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2019,
面頁冊數:	156 p.
附註:	Source: Dissertations Abstracts International, Volume: 81-06, Section: B.
Contained By:	Dissertations Abstracts International81-06B.
標題:	Nanoscience. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27603008
ISBN:	9781687977106

Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory.
Niraula, Dipesh.

Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory. - Ann Arbor : ProQuest Dissertations & Theses, 2019 - 156 p.

Source: Dissertations Abstracts International, Volume: 81-06, Section: B.

Thesis (Ph.D.)--The University of Toledo, 2019.

This item must not be sold to any third party vendors.

Two topics are explored in this dissertation: metal whiskers (MW) and resistive random access memory (RRAM). Since conductive filament lies at the heart of these distinct topics, they are combinedly presented here as two parts.The first part is dedicated to understanding MW growth and statistics. MW are hair-like conductive filaments that spontaneously grows on technologically significant metals such as Sn, Zn, Cd, and Ag. They can range from tens of nanometers to microns in diameter and hundreds of nanometers to millimeters in length. Longer whiskers can cause shorting in electrical devices posing a serious reliability concerns for virtually every industry.The electrostatic theory of MW explains the physics of whisker growth in terms of field induced nucleation. Imperfections on metals such as impurities, defects, grains, grain-boundaries etc. creates topographically inhomogeneous work function on metal surface. As a result, electrons redistribute themselves to minimize free energy creating superficial charged patches which produce strong near-surface electric field. When a local neighborhood of charged patches all possess like charge, the near-surface electric field amplifies providing necessary driving force for nucleation of metallic embryo protruding from the metal surface. The polarization energy is maximum along the vertical direction, thus embryo takes a needle shape and simultaneously grows.This dissertation includes a brief introduction to the electrostatic theory, whisker length distribution based on the uncorrelated random charge patches and central limit theorem, description of intermittent whisker growth that naturally follows the electrostatic theory, and data on field accelerated whisker growth testing on Zn samples where we found that applying electric field on metal supported whisker growth.The second part is dedicated to the RRAM device operation and various related observation. RRAM is a next-generation non volatile memory aimed at replacing the current flash-memory technology.RRAM operates by switching its resistance in response to external bias where high (OFF) and low (ON) resistive states are interpreted as '0' and '1' binary states. Resistive switching process can be described in terms of thermodynamics of phase transitions. Structurally, RRAM is a capacitor-like device with an extremely thin dielectric layer of about 10-70 nm. Bias voltage of merely ∼1 V across ∼10 nm dielectric layers results in field strength of ∼108 V/m. In response to that massive field, a conductive filament is formed through the insulator layer via phase transition. The formation process can be reversed by interchanging the bias polarity. In the reversal process, part of the filament dissolves by transforming back to insulating phase switching the device back to the original high resistant state.This dissertation includes essentials of the thermodynamic theory of resistive switching, details of scalable numerical model of RRAM device based on the theory that closely reproduces average device characteristics and observed variations, analytical and numerical description of heat transfer mechanism in the low resistance state, clarification on high resistant state conduction mechanism, and effects of scaling down such as dimensional quantization and filament charging.One comment is in order: the first part includes both the theory and experiment both done by the author while the second part includes only theoretical and modeling results.

ISBN: 9781687977106Subjects--Topical Terms:

587832
Nanoscience.
Subjects--Index Terms:

Field Induced Nucleation

Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory.
LDR:05096nmm a2200517 4500 001 2275336
005 20210119090704.5
008 220723s2019 ||||||||||||||||| ||eng d
020 $a 9781687977106
035 $a (MiAaPQ)AAI27603008
035 $a (MiAaPQ)OhioLINKtoledo1561471348406944
035 $a AAI27603008
040 $a MiAaPQ $c MiAaPQ
100 1 $a Niraula, Dipesh. $3 3553584
245 1 0 $a Physics and Applications of Conductive laments in Electronic Structures: From Metal Whiskers to Solid State Memory.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2019
300 $a 156 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-06, Section: B.
502 $a Thesis (Ph.D.)--The University of Toledo, 2019.
506 $a This item must not be sold to any third party vendors.
520 $a Two topics are explored in this dissertation: metal whiskers (MW) and resistive random access memory (RRAM). Since conductive filament lies at the heart of these distinct topics, they are combinedly presented here as two parts.The first part is dedicated to understanding MW growth and statistics. MW are hair-like conductive filaments that spontaneously grows on technologically significant metals such as Sn, Zn, Cd, and Ag. They can range from tens of nanometers to microns in diameter and hundreds of nanometers to millimeters in length. Longer whiskers can cause shorting in electrical devices posing a serious reliability concerns for virtually every industry.The electrostatic theory of MW explains the physics of whisker growth in terms of field induced nucleation. Imperfections on metals such as impurities, defects, grains, grain-boundaries etc. creates topographically inhomogeneous work function on metal surface. As a result, electrons redistribute themselves to minimize free energy creating superficial charged patches which produce strong near-surface electric field. When a local neighborhood of charged patches all possess like charge, the near-surface electric field amplifies providing necessary driving force for nucleation of metallic embryo protruding from the metal surface. The polarization energy is maximum along the vertical direction, thus embryo takes a needle shape and simultaneously grows.This dissertation includes a brief introduction to the electrostatic theory, whisker length distribution based on the uncorrelated random charge patches and central limit theorem, description of intermittent whisker growth that naturally follows the electrostatic theory, and data on field accelerated whisker growth testing on Zn samples where we found that applying electric field on metal supported whisker growth.The second part is dedicated to the RRAM device operation and various related observation. RRAM is a next-generation non volatile memory aimed at replacing the current flash-memory technology.RRAM operates by switching its resistance in response to external bias where high (OFF) and low (ON) resistive states are interpreted as '0' and '1' binary states. Resistive switching process can be described in terms of thermodynamics of phase transitions. Structurally, RRAM is a capacitor-like device with an extremely thin dielectric layer of about 10-70 nm. Bias voltage of merely ∼1 V across ∼10 nm dielectric layers results in field strength of ∼108 V/m. In response to that massive field, a conductive filament is formed through the insulator layer via phase transition. The formation process can be reversed by interchanging the bias polarity. In the reversal process, part of the filament dissolves by transforming back to insulating phase switching the device back to the original high resistant state.This dissertation includes essentials of the thermodynamic theory of resistive switching, details of scalable numerical model of RRAM device based on the theory that closely reproduces average device characteristics and observed variations, analytical and numerical description of heat transfer mechanism in the low resistance state, clarification on high resistant state conduction mechanism, and effects of scaling down such as dimensional quantization and filament charging.One comment is in order: the first part includes both the theory and experiment both done by the author while the second part includes only theoretical and modeling results.
590 $a School code: 0232.
650 4 $a Nanoscience. $3 587832
650 4 $a Physics. $3 516296
650 4 $a Quantum physics. $3 726746
650 4 $a Materials science. $3 543314
650 4 $a Theoretical physics. $3 2144760
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Nanotechnology. $3 526235
653 $a Field Induced Nucleation
653 $a Metal Whiskers
653 $a Whisker Length Statistics
653 $a Intermittent Whisker Growth
653 $a Field Accelerated Growth
653 $a RRAM
653 $a OFF State Conduction
653 $a COMSOL Modeling
653 $a Ramp-Rate dependence
653 $a Cycle-to-Cycle Variations
653 $a Thermal Analysis
653 $a Scaling-down effect
690 $a 0565
690 $a 0753
690 $a 0605
690 $a 0599
690 $a 0544
690 $a 0794
690 $a 0652
690 $a 0611
710 2 $a The University of Toledo. $b Physics. $3 3192633
773 0 $t Dissertations Abstracts International $g 81-06B.
790 $a 0232
791 $a Ph.D.
792 $a 2019
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27603008