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Nanoscale redox reaction at metal/ox...

Nagata, Takahiro.

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Nanoscale redox reaction at metal/oxide interface = a case study on Schottky contact and ReRAM /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Nanoscale redox reaction at metal/oxide interface/ by Takahiro Nagata.
其他題名:	a case study on Schottky contact and ReRAM /
作者:	Nagata, Takahiro.
出版者:	Tokyo :Springer Japan : : 2020.,
面頁冊數:	xi, 89 p. :ill., digital ;24 cm.
內容註:	General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.
Contained By:	Springer eBooks
標題:	Oxidation-reduction reaction. -
電子資源:	https://doi.org/10.1007/978-4-431-54850-8
ISBN:	9784431548508

Nanoscale redox reaction at metal/oxide interface = a case study on Schottky contact and ReRAM /
Nagata, Takahiro.

Nanoscale redox reaction at metal/oxide interfacea case study on Schottky contact and ReRAM /[electronic resource] :by Takahiro Nagata. - Tokyo :Springer Japan :2020. - xi, 89 p. :ill., digital ;24 cm. - NIMS monographs,2197-8891. - NIMS monographs..

General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

ISBN: 9784431548508

Standard No.: 10.1007/978-4-431-54850-8doiSubjects--Topical Terms:

628912
Oxidation-reduction reaction.

LC Class. No.: QD63.O9 / N343 2020

Dewey Class. No.: 541.393

Nanoscale redox reaction at metal/oxide interface = a case study on Schottky contact and ReRAM /
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