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TFET integrated circuits = from pers...

Gupta, Navneet.

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TFET integrated circuits = from perspective towards reality /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	TFET integrated circuits/ by Navneet Gupta ... [et al.].
其他題名:	from perspective towards reality /
其他作者:	Gupta, Navneet.
出版者:	Cham :Springer International Publishing : : 2021.,
面頁冊數:	xv, 139 p. :ill., digital ;24 cm.
內容註:	Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
Contained By:	Springer Nature eBook
標題:	Tunnel field-effect transistors. -
電子資源:	https://doi.org/10.1007/978-3-030-55119-3
ISBN:	9783030551193

TFET integrated circuits = from perspective towards reality /
TFET integrated circuitsfrom perspective towards reality /[electronic resource] :by Navneet Gupta ... [et al.]. - Cham :Springer International Publishing :2021. - xv, 139 p. :ill., digital ;24 cm.

Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.

This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs) The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.

ISBN: 9783030551193

Standard No.: 10.1007/978-3-030-55119-3doiSubjects--Topical Terms:

3319327
Tunnel field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

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520 $a This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs) The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
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