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Fundamental properties of semiconduc...
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Fukata, Naoki.
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Fundamental properties of semiconductor nanowires
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Fundamental properties of semiconductor nanowires/ edited by Naoki Fukata, Riccardo Rurali.
其他作者:
Fukata, Naoki.
出版者:
Singapore :Springer Singapore : : 2021.,
面頁冊數:
viii, 454 p. :ill. (some col.), digital ;24 cm.
內容註:
Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser.
Contained By:
Springer Nature eBook
標題:
Nanowires. -
電子資源:
https://doi.org/10.1007/978-981-15-9050-4
ISBN:
9789811590504
Fundamental properties of semiconductor nanowires
Fundamental properties of semiconductor nanowires
[electronic resource] /edited by Naoki Fukata, Riccardo Rurali. - Singapore :Springer Singapore :2021. - viii, 454 p. :ill. (some col.), digital ;24 cm.
Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser.
This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires' growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires' characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
ISBN: 9789811590504
Standard No.: 10.1007/978-981-15-9050-4doiSubjects--Topical Terms:
576100
Nanowires.
LC Class. No.: TK7874.85 / .F85 2021
Dewey Class. No.: 621.3815
Fundamental properties of semiconductor nanowires
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Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser.
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