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奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 = = S...

鄭建平

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奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 = = Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 =/ 鄭建平撰
Reminder of title:	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors /
remainder title:	奈米線穿隧場效電晶體之閘極正交疊負交疊與源極濃度梯度之模擬
Author:	鄭建平
other author:	劉耿銘
Published:	[花蓮縣壽豐鄉] :[國立東華大學電機工程學系], : 2019,
Description:	[18],78面 :圖,表 ;30公分
Notes:	校內電子全文開放日期 2024/08/03
Subject:	源極濃度梯度 -
Online resource:	http://134.208.29.108/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=G0610423013.id&searchmode=basic電子全文(依作者授權而定)

奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 = = Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors /
鄭建平

奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 =Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors /奈米線穿隧場效電晶體之閘極正交疊負交疊與源極濃度梯度之模擬鄭建平撰 - [花蓮縣壽豐鄉] :[國立東華大學電機工程學系], 2019 - [18],78面 :圖,表 ;30公分

校內電子全文開放日期 2024/08/03

碩士論文--國立東華大學電機工程學系

含參考書目Subjects--Topical Terms:

3394144
源極濃度梯度

奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 = = Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors /
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500 $a 畢業學年度: 107
500 $a 指導教授: 劉耿銘
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