東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Nanophotonic Devices Based on Indium...

Bhattacharya, Indrasen.

FindBook

Google Book

Amazon

博客來

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon./
作者:	Bhattacharya, Indrasen.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
面頁冊數:	194 p.
附註:	Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.
Contained By:	Dissertation Abstracts International79-08B(E).
標題:	Nanotechnology. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10685771
ISBN:	9780355831597

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
Bhattacharya, Indrasen.

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 194 p.

Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.

Thesis (Ph.D.)--University of California, Berkeley, 2017.

III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices.

ISBN: 9780355831597Subjects--Topical Terms:

526235
Nanotechnology.

Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
LDR:02826nmm a2200349 4500 001 2164337
005 20181106104113.5
008 190424s2017 ||||||||||||||||| ||eng d
020 $a 9780355831597
035 $a (MiAaPQ)AAI10685771
035 $a (MiAaPQ)berkeley:17505
035 $a AAI10685771
040 $a MiAaPQ $c MiAaPQ
100 1 $a Bhattacharya, Indrasen. $3 3352384
245 1 0 $a Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2017
300 $a 194 p.
500 $a Source: Dissertation Abstracts International, Volume: 79-08(E), Section: B.
500 $a Adviser: Connie Chang-Hasnain.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2017.
520 $a III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars directly on silicon presents a viable approach to integrate high performance nano-optoelectronic devices.
520 $a For the optical transmitter side of the photonic link, InGaAs quantum wells have been grown in a core-shell manner within InP nanopillars. Position-controlled growth with varying pitch is used to systematically control emission wavelength across the same growth substrate. These nanopillars have been fabricated into electrically-injected quantum well in nanopillar LEDs operating within the silicon transparent 1400--1550 nm spectral window and efficiently emitting micro-watts of power. A high quality factor (Q ~ 1000) undercut cavity quantum well nanolaser is demonstrated, operating in the silicon-transparent wavelength range up to room temperature under optical excitation.
520 $a We also demonstrate an InP nanopillar phototransistor as a sensitive, low-capacitance photoreceiver for the energy-efficient operation of a complete optical link. Efficient absorption in a compact single nanopillar InP photo-BJT leads to a simultaneously high responsivity of 9.5 A/W and high 3dB-bandwidth of 7 GHz.
520 $a For photovoltaic energy harvesting, a sparsely packed InP nanopillar array can absorb ~90% of the incident light because of the large absorption cross section of these near-wavelength nanopillars. Experimental data based on wavelength and angle resolved integrating sphere measurements will be presented to discuss the nearly omnidirectional absorption properties of these nanopillar arrays.
590 $a School code: 0028.
650 4 $a Nanotechnology. $3 526235
650 4 $a Optics. $3 517925
650 4 $a Nanoscience. $3 587832
690 $a 0652
690 $a 0752
690 $a 0565
710 2 $a University of California, Berkeley. $b Applied Science & Technology. $3 3352385
773 0 $t Dissertation Abstracts International $g 79-08B(E).
790 $a 0028
791 $a Ph.D.
792 $a 2017
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10685771