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Ohmic metallizations to aluminum gal...

Wang, Liang.

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Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies./
作者:	Wang, Liang.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2008,
面頁冊數:	291 p.
附註:	Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.
Contained By:	Dissertation Abstracts International69-05B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3314931
ISBN:	9780549642992

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies.
Wang, Liang.

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies. - Ann Arbor : ProQuest Dissertations & Theses, 2008 - 291 p.

Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.

This item is not available from ProQuest Dissertations & Theses.

III-nitride materials hold great promise for high performance microelectronic and optoelectronic applications. The AlGaN/GaN high electron mobility transistors (HEMTs) are capable of handling higher current densities than other III-V HEMTs due to the high density two-dimensional electron gas (2DEG) accumulated at the AlGaN/GaN interface. When combined with the large bandgap, high breakdown voltage, and high carrier velocity, GaN-based materials are excellent candidates for high-power, high-temperature and high-frequency electronic devices. Knowledge of the way in which ohmic properties are determined by the interfacial reaction down to atomic scale at the metal/semiconductor (M/S) interfaces are fundamental concerns in understanding the ohmic formation mechanism and in optimizing the device performances. In order to achieve contact metallization schemes with known and predictable characteristics, focuses of this thesis have been put on contact performance enhancement through extensive properties-parametric testing, on systematic characterization of interfacial structure using analytical cross section TEM, and finally, on carrier transport mechanism determination by variable temperature measurements.

ISBN: 9780549642992Subjects--Topical Terms:

649834
Electrical engineering.

Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies.
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245 1 0 $a Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2008
300 $a 291 p.
500 $a Source: Dissertation Abstracts International, Volume: 69-05, Section: B, page: 3196.
500 $a Adviser: Ilesanmi Adesida.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.
506 $a This item is not available from ProQuest Dissertations & Theses.
520 $a III-nitride materials hold great promise for high performance microelectronic and optoelectronic applications. The AlGaN/GaN high electron mobility transistors (HEMTs) are capable of handling higher current densities than other III-V HEMTs due to the high density two-dimensional electron gas (2DEG) accumulated at the AlGaN/GaN interface. When combined with the large bandgap, high breakdown voltage, and high carrier velocity, GaN-based materials are excellent candidates for high-power, high-temperature and high-frequency electronic devices. Knowledge of the way in which ohmic properties are determined by the interfacial reaction down to atomic scale at the metal/semiconductor (M/S) interfaces are fundamental concerns in understanding the ohmic formation mechanism and in optimizing the device performances. In order to achieve contact metallization schemes with known and predictable characteristics, focuses of this thesis have been put on contact performance enhancement through extensive properties-parametric testing, on systematic characterization of interfacial structure using analytical cross section TEM, and finally, on carrier transport mechanism determination by variable temperature measurements.
520 $a Major findings of this work include: (1) Elucidated the interfacial reactions between Al, Ti, AlTi alloy, and Ti/Al/Mo/Au on GaN. (2) Explained the electrical performance of Ti/Al/Mo/Au on AlGaN/GaN based on microstructural investigations. Proposed a "spike" mechanism. (3) Identified the role of other metals, i.e. V, Mo, and Ta, as the first layer for X/Al/Mo/Au contacts. (4) Correlated the surface roughness, lateral encroachment, and contact performance of the Ti/Al/X/Au (X=Ni, Pt, Ir, Mo, Ti and NM) contacts for AlGaN/GaN HEMTs. (5) Tailored the interfacial reaction pathways and electrical performance of Ti/Al/Mo/Au on AlGaN/GaN by incorporating Si into the metallization. Obtained low-resistance contact schemes having wide processing window. (6) Investigated the electrical performance and microstructure of the Ti/Al/Mo/Au contacts on all-binary AlN/GaN HEMTs. Optimized the Ti/Al/Mo/Au contacts on n+-GaN capped AlGaN/AlN/GaN by combined surface treatment and solid state interfacial reaction. (7) Evidenced ultra-shallow Si plasma implantation and dry etch effects of SiCl4 pre-metallization treatment. Demonstrated the best performance by side-way direct contact of the metal with the 2DEG channel. (8) Characterized the carrier transport mechanism by variable temperature measurement between 100 and 375 K.
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650 4 $a Electrical engineering. $3 649834
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