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Flexible Graphene Transistor Archite...

Ordonez, Richard Christopher.

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Flexible Graphene Transistor Architecture for Optical Sensor Technology.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Flexible Graphene Transistor Architecture for Optical Sensor Technology./
作者:	Ordonez, Richard Christopher.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
面頁冊數:	111 p.
附註:	Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.
Contained By:	Dissertation Abstracts International79-01B(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10656624
ISBN:	9780355265057

Flexible Graphene Transistor Architecture for Optical Sensor Technology.
Ordonez, Richard Christopher.

Flexible Graphene Transistor Architecture for Optical Sensor Technology. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 111 p.

Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.

Thesis (Ph.D.)--University of Hawai'i at Manoa, 2017.

The unique electrical and optoelectronic properties of graphene allow tunable conductivity and broadband electromagnetic absorption that spans the ultraviolet and infrared regimes. However, in the current state-of-art graphene sensor architectures, junction resistance and doping concentration are predominant factors that affect signal strength and sensitivity. Unfortunately, graphene produces high contact resistances with standard electrode materials (~few kilo-ohms), therefore, signal is weak and large carrier concentrations are required to probe sensitivity. Moreover, the atomic thickness of graphene enables the potential for flexible electronics, but there has not been a successful graphene sensor architecture that demonstrates stable operation on flexible substrates and with minimal fabrication cost.

ISBN: 9780355265057Subjects--Topical Terms:

649834
Electrical engineering.

Flexible Graphene Transistor Architecture for Optical Sensor Technology.
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245 1 0 $a Flexible Graphene Transistor Architecture for Optical Sensor Technology.
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300 $a 111 p.
500 $a Source: Dissertation Abstracts International, Volume: 79-01(E), Section: B.
500 $a Adviser: David Garmire.
502 $a Thesis (Ph.D.)--University of Hawai'i at Manoa, 2017.
520 $a The unique electrical and optoelectronic properties of graphene allow tunable conductivity and broadband electromagnetic absorption that spans the ultraviolet and infrared regimes. However, in the current state-of-art graphene sensor architectures, junction resistance and doping concentration are predominant factors that affect signal strength and sensitivity. Unfortunately, graphene produces high contact resistances with standard electrode materials (~few kilo-ohms), therefore, signal is weak and large carrier concentrations are required to probe sensitivity. Moreover, the atomic thickness of graphene enables the potential for flexible electronics, but there has not been a successful graphene sensor architecture that demonstrates stable operation on flexible substrates and with minimal fabrication cost.
520 $a In this study, the author explores a novel 3-terminal transistor architecture that integrates twodimensional graphene, liquid metal, and electrolytic gate dielectrics (LM-GFETs: Liquid Metal and Graphene Field-Effect Transistors ). The goal is to deliver a sensitive, flexible, and lightweight transistor architecture that will improve sensor technology and maneuverability. The reported high thermal conductivity of graphene provides potential for room-temperature thermal management without the need of thermal-electric and gas cooling systems that are standard in sensor platforms. Liquid metals provide a unique opportunity for conformal electrodes that maximize surface area contact, therefore, enable flexibility, lower contact resistance, and reduce damage to the graphene materials involved. Lastly, electrolytic gate dielectrics provide conformability and high capacitances needed for high on/off rations and electrostatic gating.
520 $a Results demonstrated that with minimal fabrication steps the proposed flexible graphene transistor architecture demonstrated ambipolar current-voltage transfer characteristics that are comparable to the current state-of-the-art. An additional investigation demonstrated PN junction operation and the successful integration of the proposed architecture into an optoelectronic application with the use of semiconductor quantum dots in contact with the graphene material that acted as optical absorbers to increase detector gain. Applications that can benefit from such technology advancement include Nano-satellites (Nanosat), Underwater autonomous vehicles (UAV), and airborne platforms in which flexibility and sensitivity are critical parameters that must be optimized to increase mission duration and range.
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