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Electrical Manipulation of Donor Spi...

Sigillito, Anthony James.

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Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium./
作者:	Sigillito, Anthony James.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
面頁冊數:	151 p.
附註:	Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
Contained By:	Dissertation Abstracts International78-09B(E).
標題:	Physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10259715
ISBN:	9781369714920

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium.
Sigillito, Anthony James.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 151 p.

Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.

Thesis (Ph.D.)--Princeton University, 2017.

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability.

ISBN: 9781369714920Subjects--Topical Terms:

516296
Physics.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium.
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500 $a Source: Dissertation Abstracts International, Volume: 78-09(E), Section: B.
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502 $a Thesis (Ph.D.)--Princeton University, 2017.
520 $a Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability.
520 $a First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur.
520 $a In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a single-phonon T1 process. At lower frequencies or lower temperatures the qubit coherence times should substantially increase.
520 $a Finally, we measure the electric field tunability of donors in germanium and find a four order-of-magnitude enhancement in the spin-orbit Stark shift and confirm that the donors should be tunable by at least 4 times the electron spin ensemble linewidth (in isotopically enriched material). Germanium should therefore also be more sensitive to electrically driven nuclear magnetic resonance. Based on these results germanium is a promising alternative to silicon for spin qubits.
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