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Light-matter Interactions in Semicon...

Narang, Prineha.

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Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics./
作者:	Narang, Prineha.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2015,
面頁冊數:	196 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
Contained By:	Dissertation Abstracts International77-09B(E).
標題:	Quantum physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10106301
ISBN:	9781339697390

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics.
Narang, Prineha.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics. - Ann Arbor : ProQuest Dissertations & Theses, 2015 - 196 p.

Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.

Thesis (Ph.D.)--California Institute of Technology, 2015.

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals.

ISBN: 9781339697390Subjects--Topical Terms:

726746
Quantum physics.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics.
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500 $a Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
500 $a Advisers: Harry A. Atwater; Nathan S. Lewis.
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520 $a This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals.
520 $a The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here.
520 $a The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown.
520 $a Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.
590 $a School code: 0037.
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