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Calculations of Electronic Structure...
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Ananthaneni, Sahithi.
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Calculations of Electronic Structure properties of Advanced Next-gen materials for applications in Nanoelectronics and Nanocatalysis.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Calculations of Electronic Structure properties of Advanced Next-gen materials for applications in Nanoelectronics and Nanocatalysis./
作者:
Ananthaneni, Sahithi.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2016,
面頁冊數:
58 p.
附註:
Source: Masters Abstracts International, Volume: 56-02.
Contained By:
Masters Abstracts International56-02(E).
標題:
Nanoscience. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10192309
ISBN:
9781369336825
Calculations of Electronic Structure properties of Advanced Next-gen materials for applications in Nanoelectronics and Nanocatalysis.
Ananthaneni, Sahithi.
Calculations of Electronic Structure properties of Advanced Next-gen materials for applications in Nanoelectronics and Nanocatalysis.
- Ann Arbor : ProQuest Dissertations & Theses, 2016 - 58 p.
Source: Masters Abstracts International, Volume: 56-02.
Thesis (M.S.Ch.E.)--Villanova University, 2016.
Research on nanomaterials in various fields such as industrial chemicals, biomedical technology, and electronic applications are providing a platform to answer key challenges in terms of energy storage or conversion. In the work described here, we worked on two different projects focusing on both nanoelectronics and nanocatalysis.
ISBN: 9781369336825Subjects--Topical Terms:
587832
Nanoscience.
Calculations of Electronic Structure properties of Advanced Next-gen materials for applications in Nanoelectronics and Nanocatalysis.
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We present DFT calculations to study the geometric structure and charge transfer to the GaCl4 center in (BETS)2-GaCl4 on the Ag (111) and Ag (100) surfaces, with multiple successive F substitutions onto the Ga center. Results show two interesting important phenomena: first, that the amount of charge transfer is indeed highly surface sensitive (by about .6 net electrons in this case), and second, that substitution of different amounts of F halogenation on the Ga center also has profound effects on the charge transfer to the Ga center.
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