東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Mechanisms Responsible for Microwave...

Zhang, Shengke.

Linked to FindBook

Google Book

Amazon

博客來

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials./
Author:	Zhang, Shengke.
Description:	107 p.
Notes:	Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
Contained By:	Dissertation Abstracts International77-09B(E).
Subject:	Materials science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10107120
ISBN:	9781339705224

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
Zhang, Shengke.

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials. - 107 p.

Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.

Thesis (Ph.D.)--Arizona State University, 2016.

Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (tau f) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, tauf, is related to three material parameters according to the equation, tau f = - (½ tauepsilon + ½ taumu + alphaL), where tauepsilon, taumu , and alphaL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for tau f. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators.

ISBN: 9781339705224Subjects--Topical Terms:

543314
Materials science.

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
LDR:02466nmm a2200289 4500 001 2114846
005 20161128141924.5
008 180830s2016 ||||||||||||||||| ||eng d
020 $a 9781339705224
035 $a (MiAaPQ)AAI10107120
035 $a AAI10107120
040 $a MiAaPQ $c MiAaPQ
100 1 $a Zhang, Shengke. $3 3276457
245 1 0 $a Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
300 $a 107 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
500 $a Adviser: Nathan Newman.
502 $a Thesis (Ph.D.)--Arizona State University, 2016.
520 $a Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (tau f) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, tauf, is related to three material parameters according to the equation, tau f = - (½ tauepsilon + ½ taumu + alphaL), where tauepsilon, taumu , and alphaL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for tau f. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators.
590 $a School code: 0010.
650 4 $a Materials science. $3 543314
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Low temperature physics. $3 3173917
690 $a 0794
690 $a 0611
690 $a 0598
710 2 $a Arizona State University. $b Materials Science and Engineering. $3 1680702
773 0 $t Dissertation Abstracts International $g 77-09B(E).
790 $a 0010
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10107120