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Voltage-induced reduction of graphen...

Faucett, Austin C.

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Voltage-induced reduction of graphene oxide.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Voltage-induced reduction of graphene oxide./
作者:	Faucett, Austin C.
面頁冊數:	134 p.
附註:	Source: Dissertation Abstracts International, Volume: 78-05(E), Section: B.
Contained By:	Dissertation Abstracts International78-05B(E).
標題:	Nanotechnology. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10241818
ISBN:	9781369461329

Voltage-induced reduction of graphene oxide.
Faucett, Austin C.

Voltage-induced reduction of graphene oxide. - 134 p.

Source: Dissertation Abstracts International, Volume: 78-05(E), Section: B.

Thesis (Ph.D.)--State University of New York at Binghamton, 2016.

Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.

ISBN: 9781369461329Subjects--Topical Terms:

526235
Nanotechnology.

Voltage-induced reduction of graphene oxide.
LDR:02852nmm a2200277 4500 001 2079417
005 20170313112144.5
008 170521s2016 ||||||||||||||||| ||eng d
020 $a 9781369461329
035 $a (MiAaPQ)AAI10241818
035 $a AAI10241818
040 $a MiAaPQ $c MiAaPQ
100 1 $a Faucett, Austin C. $3 3195095
245 1 0 $a Voltage-induced reduction of graphene oxide.
300 $a 134 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-05(E), Section: B.
500 $a Advisers: Jeffrey M. Mativetsky; Bruce White.
502 $a Thesis (Ph.D.)--State University of New York at Binghamton, 2016.
520 $a Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.
590 $a School code: 0792.
650 4 $a Nanotechnology. $3 526235
650 4 $a Physical chemistry. $3 1981412
690 $a 0652
690 $a 0494
710 2 $a State University of New York at Binghamton. $b Physics, Applied Physics, and Astronomy. $3 1266322
773 0 $t Dissertation Abstracts International $g 78-05B(E).
790 $a 0792
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10241818