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Ionizing Radiation Effects on Graphe...

Alexandrou, Konstantinos.

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Ionizing Radiation Effects on Graphene Based Field Effects Transistors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ionizing Radiation Effects on Graphene Based Field Effects Transistors./
作者:	Alexandrou, Konstantinos.
面頁冊數:	148 p.
附註:	Source: Dissertation Abstracts International, Volume: 78-01(E), Section: B.
Contained By:	Dissertation Abstracts International78-01B(E).
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10151423
ISBN:	9781369061871

Ionizing Radiation Effects on Graphene Based Field Effects Transistors.
Alexandrou, Konstantinos.

Ionizing Radiation Effects on Graphene Based Field Effects Transistors. - 148 p.

Source: Dissertation Abstracts International, Volume: 78-01(E), Section: B.

Thesis (Ph.D.)--Columbia University, 2016.

Graphene, first isolated in 2004 by Andre Geim and Konstantin Novoselov, is an atomically thin two-dimensional layer of hexagonal carbon that has been extensively studied due to its unique electronic, mechanical, thermal and optical properties. Its vast potential has led to the development of a wide variety of novel devices such as, transistors, solar cells, batteries and sensors that offer significant advantages over the conventional microelectronic ones.

ISBN: 9781369061871Subjects--Topical Terms:

587832
Nanoscience.

Ionizing Radiation Effects on Graphene Based Field Effects Transistors.
LDR:03543nmm a2200325 4500 001 2079384
005 20170313112140.5
008 170521s2016 ||||||||||||||||| ||eng d
020 $a 9781369061871
035 $a (MiAaPQ)AAI10151423
035 $a AAI10151423
040 $a MiAaPQ $c MiAaPQ
100 1 $a Alexandrou, Konstantinos. $3 3195058
245 1 0 $a Ionizing Radiation Effects on Graphene Based Field Effects Transistors.
300 $a 148 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-01(E), Section: B.
500 $a Adviser: Ioannis Kymissis.
502 $a Thesis (Ph.D.)--Columbia University, 2016.
520 $a Graphene, first isolated in 2004 by Andre Geim and Konstantin Novoselov, is an atomically thin two-dimensional layer of hexagonal carbon that has been extensively studied due to its unique electronic, mechanical, thermal and optical properties. Its vast potential has led to the development of a wide variety of novel devices such as, transistors, solar cells, batteries and sensors that offer significant advantages over the conventional microelectronic ones.
520 $a Although graphene-based devices show very promising performance characteristics, limited has been done in order to evaluate how these devices operate in a radiation harsh environment. Undesirable phenomena such as total dose effects, single event upsets, displacement damage and soft errors that silicon-based devices are prone to, can have a detrimental impact on performance and reliability. Similarly, the significant effects of irradiation on carbon nanotubes indicate the potential for related radiation induced defects in carbon-based materials, such as graphene.
520 $a In this work, we fabricate graphene field effect transistors (GFETs) and systematically study the various effects of ionizing radiation on the material and device level. Graphene grown by chemical vapor deposition (CVD) along with standard lithographic and shadow masking techniques, was used for the transistor fabrication. GFETs were subjected to different radiation sources, such as, beta particles (electron radiation), gamma (photons) and ions (alpha, protons and Fe particles) under various radiation doses and energies. The effects on graphene's crystal structure, transport properties and doping profile were examined by using a variety of characterization tools and techniques. We demonstrate not only the mechanisms of ionized charge build up in the substrate and displacement damage effects on GFET performance, but also that atmospheric adsorbents from the surrounding environment can have a significant impact on the radiation hardness of graphene. We developed different transistor structures that mitigate these effects and performed computer simulations to enhance even further our understanding of radiation damage.
520 $a Our results show that devices using a passivation layer and a shielded gate structure were less prone to irradiation effects when compared to the standard back-gate GFETs, offering less performance degradation and enhanced stability over prolonged irradiation periods. This is an important step towards the development of radiation hard graphene-based devices, enabling operation in space, military, or other radiation sensitive environments.
590 $a School code: 0054.
650 4 $a Nanoscience. $3 587832
650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
690 $a 0565
690 $a 0544
690 $a 0652
710 2 $a Columbia University. $b Electrical Engineering. $3 1675652
773 0 $t Dissertation Abstracts International $g 78-01B(E).
790 $a 0054
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10151423