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Properties of ultra-thin metal and o...

Imaduddin, Syed.

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Properties of ultra-thin metal and oxide films on NiO(100).

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Properties of ultra-thin metal and oxide films on NiO(100)./
作者:	Imaduddin, Syed.
面頁冊數:	160 p.
附註:	Source: Dissertation Abstracts International, Volume: 57-12, Section: B, page: 7579.
Contained By:	Dissertation Abstracts International57-12B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9715062
ISBN:	9780591228267

Properties of ultra-thin metal and oxide films on NiO(100).
Imaduddin, Syed.

Properties of ultra-thin metal and oxide films on NiO(100). - 160 p.

Source: Dissertation Abstracts International, Volume: 57-12, Section: B, page: 7579.

Thesis (Ph.D.)--The University of Maine, 1996.

The properties of ultra-thin metal and oxide films grown on stoichiometric air-cleaved single crystal NiO(100) surfaces have been investigated by dosing aluminum and magnesium in ultra-high vacuum (UHV) and oxygen atmospheres. Film structure was studied by electron diffraction, and surfaces and buried interfaces were probed using electron spectroscopy.

ISBN: 9780591228267Subjects--Topical Terms:

3173567
Condensed matter physics.

Properties of ultra-thin metal and oxide films on NiO(100).
LDR:03243nmm a2200313 4500 001 2071055
005 20160628073007.5
008 170521s1996 ||||||||||||||||| ||eng d
020 $a 9780591228267
035 $a (MiAaPQ)AAI9715062
035 $a AAI9715062
040 $a MiAaPQ $c MiAaPQ
100 1 $a Imaduddin, Syed. $3 3186153
245 1 0 $a Properties of ultra-thin metal and oxide films on NiO(100).
300 $a 160 p.
500 $a Source: Dissertation Abstracts International, Volume: 57-12, Section: B, page: 7579.
500 $a Adviser: Robert J. Lad.
502 $a Thesis (Ph.D.)--The University of Maine, 1996.
520 $a The properties of ultra-thin metal and oxide films grown on stoichiometric air-cleaved single crystal NiO(100) surfaces have been investigated by dosing aluminum and magnesium in ultra-high vacuum (UHV) and oxygen atmospheres. Film structure was studied by electron diffraction, and surfaces and buried interfaces were probed using electron spectroscopy.
520 $a When Mg is dosed onto NiO(100) in UHV at 100$\sp\circ$C, MgO forms by the interacting of Mg with the oxygen anions in the substrate thereby reducing the nickel cations. Metallic Mg layers form upon subsequent Mg dosing. When UHV annealed below 250$\sp\circ$C, further MgO formation occurs with reduction of the Ni cations; above 250$\sp\circ$C Mg desorption dominates. When Mg is deposited in O$\sb2$ below 250$\sp\circ$C, epitaxial MgO(100) layers grow on top of NiO(100) with negligible intermixing. Annealing in UHV show the films to be stable up to 550$\sp\circ$C. Between 550$\sp\circ$C and 700$\sp\circ$C, interdiffusion occurs between the MgO films and the NiO substrate and is accompanied by some MgO desorption. Above 750$\sp\circ$C, diffusion of MgO into NiO dominates. Multilayer films composed of alternating MgO-NiO films were also formed on NiO surfaces. Oriented growth occurs with negligible intermixing at each oxide/oxide interface. Annealing treatments above 550$\sp\circ$C in UHV show similar interdiffusion effects as MgO films grown on NiO, except that no MgO desorption is observed.
520 $a Aluminum films grown on NiO(100) at 250$\sp\circ$C in UHV interact strongly with the substrate, and form an epitaxial Ni$\sb3$Al(100) layer at the interface by extracting Ni from the underlying NiO. When Ni diffusion becomes rate limiting, a polycrystalline aluminum layer forms on top of the Ni$\sb3$Al phase. There was no evidence to suggest any interaction between aluminum and the oxygen anions. When Al is deposited in O$\sb2$ at 800$\sp\circ$C, the overlayer interacts with the NiO(100) substrate forming a $\rm NiAl\sb2O\sb4$ spinel phase. Growth at 250$\sp\circ$C results in the formation of an amorphous $\rm Al\sb2O\sb3$ layer with little interaction with the substrate. Post-deposition annealing of the amorphous film to 800$\sp\circ$C in O$\sb2$ results in a strong reaction at the interface and film crystallization to the $\rm NiAl\sb2O\sb4$ spinel phase.
590 $a School code: 0113.
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
650 4 $a Physical chemistry. $3 1981412
690 $a 0611
690 $a 0794
690 $a 0494
710 2 $a The University of Maine. $3 1029373
773 0 $t Dissertation Abstracts International $g 57-12B.
790 $a 0113
791 $a Ph.D.
792 $a 1996
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9715062