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Extraction of carrier mobility and i...

Chidambaram, Thenappan.

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Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method./
作者:	Chidambaram, Thenappan.
面頁冊數:	115 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.
Contained By:	Dissertation Abstracts International77-04B(E).
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3738904
ISBN:	9781339294117

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method.
Chidambaram, Thenappan.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method. - 115 p.

Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2015.

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

ISBN: 9781339294117Subjects--Topical Terms:

587832
Nanoscience.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method.
LDR:02347nmm a2200289 4500 001 2070289
005 20160531114442.5
008 170521s2015 ||||||||||||||||| ||eng d
020 $a 9781339294117
035 $a (MiAaPQ)AAI3738904
035 $a AAI3738904
040 $a MiAaPQ $c MiAaPQ
100 1 $a Chidambaram, Thenappan. $3 3185336
245 1 0 $a Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method.
300 $a 115 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.
500 $a Adviser: Serge Oktyabrsky.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2015.
520 $a III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.
590 $a School code: 0668.
650 4 $a Nanoscience. $3 587832
650 4 $a Physics. $3 516296
650 4 $a Electrical engineering. $3 649834
690 $a 0565
690 $a 0605
690 $a 0544
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 77-04B(E).
790 $a 0668
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3738904