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3D integration with coaxial through ...

Adamshick, Stephen.

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3D integration with coaxial through silicon vias.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	3D integration with coaxial through silicon vias./
作者:	Adamshick, Stephen.
面頁冊數:	140 p.
附註:	Source: Dissertation Abstracts International, Volume: 76-08(E), Section: B.
Contained By:	Dissertation Abstracts International76-08B(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3687792
ISBN:	9781321657364

3D integration with coaxial through silicon vias.
Adamshick, Stephen.

3D integration with coaxial through silicon vias. - 140 p.

Source: Dissertation Abstracts International, Volume: 76-08(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2015.

3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging efficiency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Specifically, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior.

ISBN: 9781321657364Subjects--Topical Terms:

649834
Electrical engineering.

3D integration with coaxial through silicon vias.
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245 1 0 $a 3D integration with coaxial through silicon vias.
300 $a 140 p.
500 $a Source: Dissertation Abstracts International, Volume: 76-08(E), Section: B.
500 $a Adviser: Michael Liehr.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2015.
520 $a 3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging efficiency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Specifically, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior.
520 $a This thesis focuses on coaxial TSV technology due to its superior performance compared to the current existing TSV technology at high frequencies. By confining signal propagation within the coaxial TSV shield, power losses to the silicon substrate are eliminated and unintentional signal coupling is avoided. To the best of our knowledge, coaxial TSV technology has only been characterized using finite element modeling.
520 $a The work presented by this thesis focuses on fabricating coaxial TSVs within the confines of standard poly gate CMOS processing. In addition, we perform a high frequency electrical characterization using s-parameters and a thermal stress characterization using micro-Raman Spectroscopy. Furthermore, we investigate applications in SPICE modeling and antenna on chip (AoC) applications utilizing coaxial TSV technology. Our results indicate the coaxial TSV reduces signal attenuation by 35% and time delay by 25% compared to the standard non-shielded TSV technology. Coaxial TSV is consistent with previous TSV results regarding induced silicon stress. Lastly, we propose a 60 GHz antenna design using the coaxial TSV that significantly improves antenna gain compared to previous literature examples.
590 $a School code: 0668.
650 4 $a Electrical engineering. $3 649834
650 4 $a Electromagnetics. $3 3173223
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710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 76-08B(E).
790 $a 0668
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793 $a English
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