東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

A Gate Sinking Threshold Voltage Adj...

Zhang, Weijia.

FindBook

Google Book

Amazon

博客來

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT./
作者:	Zhang, Weijia.
面頁冊數:	111 p.
附註:	Source: Masters Abstracts International, Volume: 55-01.
Contained By:	Masters Abstracts International55-01(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599288
ISBN:	9781339056593

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
Zhang, Weijia.

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT. - 111 p.

Source: Masters Abstracts International, Volume: 55-01.

Thesis (M.A.S.)--University of Toronto (Canada), 2015.

GaN-based power electronics receive many interests because of its wider bandgap, higher electron mobility and higher critical electrical field than silicon. However, the intrinsic AlGaN/GaN-based HEMT is a "normally-on" device. This thesis proposes a gate sinking method during the metal gate deposition to adjust the VT towards enhancement mode operation. This recessed gate process relies on the chemical reaction between Ta and AlGaN using a simple RTA procedure rather than the more complicated RIE method. This eliminates the need for etching with nanometer precision. During the Ta sputtering process, both Ar and N2 carrier gases are used to form TaN with work function in the range of 4.15 to 4.7 eV. The fabricated HV GaN HEMTs exhibit VT shift from -5 to -2 V. Moreover, the proposed device is compatible with silicon-CMOS technology to ensure cost-effective implementation of future high performance smart power ICs.

ISBN: 9781339056593Subjects--Topical Terms:

649834
Electrical engineering.

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
LDR:01762nmm a2200265 4500 001 2067333
005 20160325105910.5
008 170521s2015 ||||||||||||||||| ||eng d
020 $a 9781339056593
035 $a (MiAaPQ)AAI1599288
035 $a AAI1599288
040 $a MiAaPQ $c MiAaPQ
100 1 $a Zhang, Weijia. $3 3182180
245 1 2 $a A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
300 $a 111 p.
500 $a Source: Masters Abstracts International, Volume: 55-01.
500 $a Adviser: Wai Tung Ng.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2015.
520 $a GaN-based power electronics receive many interests because of its wider bandgap, higher electron mobility and higher critical electrical field than silicon. However, the intrinsic AlGaN/GaN-based HEMT is a "normally-on" device. This thesis proposes a gate sinking method during the metal gate deposition to adjust the VT towards enhancement mode operation. This recessed gate process relies on the chemical reaction between Ta and AlGaN using a simple RTA procedure rather than the more complicated RIE method. This eliminates the need for etching with nanometer precision. During the Ta sputtering process, both Ar and N2 carrier gases are used to form TaN with work function in the range of 4.15 to 4.7 eV. The fabricated HV GaN HEMTs exhibit VT shift from -5 to -2 V. Moreover, the proposed device is compatible with silicon-CMOS technology to ensure cost-effective implementation of future high performance smart power ICs.
590 $a School code: 0779.
650 4 $a Electrical engineering. $3 649834
690 $a 0544
710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 2096349
773 0 $t Masters Abstracts International $g 55-01(E).
790 $a 0779
791 $a M.A.S.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599288