語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Construction and Analysis of PbSe Qu...
~
Gibbs, Markelle Lewis.
FindBook
Google Book
Amazon
博客來
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells./
作者:
Gibbs, Markelle Lewis.
面頁冊數:
96 p.
附註:
Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.
Contained By:
Dissertation Abstracts International75-10B(E).
標題:
Materials science. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3626978
ISBN:
9781321020625
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
Gibbs, Markelle Lewis.
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
- 96 p.
Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.
Thesis (Ph.D.)--University of California, Irvine, 2014.
PbX (X = S, Se, Te) quantum dot (QD) thin films have the potential to push photovoltaic efficiencies over the Shockley-Queisser limit. The focus of this thesis is the development of a robust and reproducible process for making thin film PbX QD heterojunction solar cells (HSC). Literature already has several examples of methods used to optimize the synthesis and film deposition techniques for PbX QD devices. So experiments here are designed to optimize the sputtering conditions and material selection for the metal oxide window layers. PbSe QDs treated with 1,2-ethanedithiol (EDT) are well suited to be the conductive absorber layer of HSCs. The sputtering conditions and post deposition processing of metal oxide window layers, ZnO and SnO2 thin films, are correlated with HSC performance. Junctions made of 1.4 eV PbSe QDs and ZnO produce HSCs with an average efficiency of 2.9% (+/- 0.1%), while SnO2 is a better match with 1.1 eV PbSe QDs with an average efficiency of 0.9% (+/- 0.1%). Photovoltaic performance is very sensitive to the relative band positions of the metal oxide window layer and PbSe QDs. However, this sensitivity is confined to the interface of the heterojunction. Changing the bulk material of the window layer had no detectable impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering. impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering.
ISBN: 9781321020625Subjects--Topical Terms:
543314
Materials science.
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
LDR
:02460nmm a2200289 4500
001
2066063
005
20151221141523.5
008
170521s2014 ||||||||||||||||| ||eng d
020
$a
9781321020625
035
$a
(MiAaPQ)AAI3626978
035
$a
AAI3626978
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Gibbs, Markelle Lewis.
$3
3180827
245
1 0
$a
Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
300
$a
96 p.
500
$a
Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.
500
$a
Adviser: Matthew Law.
502
$a
Thesis (Ph.D.)--University of California, Irvine, 2014.
520
$a
PbX (X = S, Se, Te) quantum dot (QD) thin films have the potential to push photovoltaic efficiencies over the Shockley-Queisser limit. The focus of this thesis is the development of a robust and reproducible process for making thin film PbX QD heterojunction solar cells (HSC). Literature already has several examples of methods used to optimize the synthesis and film deposition techniques for PbX QD devices. So experiments here are designed to optimize the sputtering conditions and material selection for the metal oxide window layers. PbSe QDs treated with 1,2-ethanedithiol (EDT) are well suited to be the conductive absorber layer of HSCs. The sputtering conditions and post deposition processing of metal oxide window layers, ZnO and SnO2 thin films, are correlated with HSC performance. Junctions made of 1.4 eV PbSe QDs and ZnO produce HSCs with an average efficiency of 2.9% (+/- 0.1%), while SnO2 is a better match with 1.1 eV PbSe QDs with an average efficiency of 0.9% (+/- 0.1%). Photovoltaic performance is very sensitive to the relative band positions of the metal oxide window layer and PbSe QDs. However, this sensitivity is confined to the interface of the heterojunction. Changing the bulk material of the window layer had no detectable impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering. impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering.
590
$a
School code: 0030.
650
4
$a
Materials science.
$3
543314
650
4
$a
Nanoscience.
$3
587832
650
4
$a
Chemistry.
$3
516420
690
$a
0794
690
$a
0565
690
$a
0485
710
2
$a
University of California, Irvine.
$b
Chemistry - Ph.D..
$3
2094938
773
0
$t
Dissertation Abstracts International
$g
75-10B(E).
790
$a
0030
791
$a
Ph.D.
792
$a
2014
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3626978
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9298773
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入