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Rational Design of Zinc Phosphide He...

Bosco, Jeffrey Paul.

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Rational Design of Zinc Phosphide Heterojunction Photovoltaics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Rational Design of Zinc Phosphide Heterojunction Photovoltaics./
作者:	Bosco, Jeffrey Paul.
面頁冊數:	173 p.
附註:	Source: Dissertation Abstracts International, Volume: 75-12(E), Section: B.
Contained By:	Dissertation Abstracts International75-12B(E).
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3624439
ISBN:	9781303977824

Rational Design of Zinc Phosphide Heterojunction Photovoltaics.
Bosco, Jeffrey Paul.

Rational Design of Zinc Phosphide Heterojunction Photovoltaics. - 173 p.

Source: Dissertation Abstracts International, Volume: 75-12(E), Section: B.

Thesis (Ph.D.)--California Institute of Technology, 2014.

This item must not be sold to any third party vendors.

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (&agr;-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10.

ISBN: 9781303977824Subjects--Topical Terms:

543314
Materials science.

Rational Design of Zinc Phosphide Heterojunction Photovoltaics.
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100 1 $a Bosco, Jeffrey Paul. $3 3178383
245 1 0 $a Rational Design of Zinc Phosphide Heterojunction Photovoltaics.
300 $a 173 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-12(E), Section: B.
500 $a Adviser: Harry A. Atwater.
502 $a Thesis (Ph.D.)--California Institute of Technology, 2014.
506 $a This item must not be sold to any third party vendors.
520 $a The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (&agr;-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10.
520 $a 4cm-1), and long minority-carrier diffusion length (>5 &mgr;m), Zn3P 2 is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn 3P2 device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn3P 2 which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn3P2 interfaces, an ideal heterojunction partner has not yet been found.
520 $a The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn3P2 absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn3P2 on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn3P2 epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn3P2 and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn3P 2 PV device. Finally, various II-VI/Zn3P2 heterojunction solar cells designs are fabricated, including substrate and superstrate architectures, and evaluated based on their solar conversion efficiency.
590 $a School code: 0037.
650 4 $a Materials science. $3 543314
650 4 $a Energy. $3 876794
650 4 $a Optics. $3 517925
690 $a 0794
690 $a 0791
690 $a 0752
710 2 $a California Institute of Technology. $b Chemical Engineering. $3 2093067
773 0 $t Dissertation Abstracts International $g 75-12B(E).
790 $a 0037
791 $a Ph.D.
792 $a 2014
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3624439