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Nanophotonics for Optoelectronic Dev...
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Grote, Richard R.
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Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics./
作者:
Grote, Richard R.
面頁冊數:
177 p.
附註:
Source: Dissertation Abstracts International, Volume: 75-08(E), Section: B.
Contained By:
Dissertation Abstracts International75-08B(E).
標題:
Electrical engineering. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3619977
ISBN:
9781303896453
Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics.
Grote, Richard R.
Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics.
- 177 p.
Source: Dissertation Abstracts International, Volume: 75-08(E), Section: B.
Thesis (Ph.D.)--Columbia University, 2014.
This item must not be sold to any third party vendors.
The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area.
ISBN: 9781303896453Subjects--Topical Terms:
649834
Electrical engineering.
Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics.
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Source: Dissertation Abstracts International, Volume: 75-08(E), Section: B.
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Adviser: Richard M. Osgood.
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The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area.
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This dissertation details the application of nanophotonics to two optoelectronic systems: extrinsic photodetectors for silicon photonics and light-trapping in organic photovoltaics. Error-free reception of 10 Gb/s data at lambda = 1.55 mum is demonstrated with a Si+ ion-implanted silicon waveguide photodiode. To mitigate the relatively small absorption coefficient of ion-implanted silicon, resonant cavity enhancement using in-line Fabry-Perot and 1D photonic crystal cavities, as well as slow light enhancement using a coupled resonator optical waveguide are discussed. The extension of these photodiodes to the mid-infrared is demonstrated using Zn+ implantation to detect over a range of lambda = 2.2-2.4 mum, and a new method for modulation and switching in integrated optics by using interference in a resonant cavity, termed coherent perfect loss (CPL), is presented. Finally, the upper limit of nanophotonic light trapping is derived for organic photovoltaics with material anisotropy included.
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