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Silicon/silicon-germanium quantum do...

Yuan, Mingyun.

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Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors./
Author:	Yuan, Mingyun.
Description:	116 p.
Notes:	Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.
Contained By:	Dissertation Abstracts International76-01B(E).
Subject:	Condensed matter physics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3634658
ISBN:	9781321153088

Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
Yuan, Mingyun.

Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors. - 116 p.

Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.

Thesis (Ph.D.)--Dartmouth College, 2013.

This item must not be sold to any third party vendors.

Si/SiGe quantum dots (QDs) are promising candidates for spin-based quantum bits (qubits) as a result of the reduced spin-orbit coupling as well as the Si isotopes with zero nuclear spin. Meanwhile, qubit readout is a challenge related to semiconductorbased quantum computation. A superconducting single-electron transistor (SET), when operating in the radio-frequency (rf) regime, has a combination of high charge sensitivity and low back-action and can potentially become an ideal charge sensor for the QDs.

ISBN: 9781321153088Subjects--Topical Terms:

3173567
Condensed matter physics.

Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
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020 $a 9781321153088
035 $a (MiAaPQ)AAI3634658
035 $a AAI3634658
040 $a MiAaPQ $c MiAaPQ
100 1 $a Yuan, Mingyun. $3 3173982
245 1 0 $a Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
300 $a 116 p.
500 $a Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.
500 $a Adviser: Alexander J. Rimberg.
502 $a Thesis (Ph.D.)--Dartmouth College, 2013.
506 $a This item must not be sold to any third party vendors.
520 $a Si/SiGe quantum dots (QDs) are promising candidates for spin-based quantum bits (qubits) as a result of the reduced spin-orbit coupling as well as the Si isotopes with zero nuclear spin. Meanwhile, qubit readout is a challenge related to semiconductorbased quantum computation. A superconducting single-electron transistor (SET), when operating in the radio-frequency (rf) regime, has a combination of high charge sensitivity and low back-action and can potentially become an ideal charge sensor for the QDs.
520 $a This thesis describes the development of superconducting SET charge sensors for Si/SiGe QDs. Using rf-SETs we have detected real-time electron tunneling events on the order of 10 microseconds in a single QD and mapped out the stability diagram of a double QD, showing spin blockade and bias triangles due to excited-state transitions. In Addition, Kondo effects that are significantly different from the standard spin 1/2 model have been observed and investigated in both perpendicular and in-plane magnetic fields, indicating the interplay between the spin and valley degrees of freedom in Si.
590 $a School code: 0059.
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Quantum physics. $3 726746
650 4 $a Physics. $3 516296
690 $a 0611
690 $a 0599
690 $a 0605
710 2 $a Dartmouth College. $b Physics and Astronomy. $3 1036059
773 0 $t Dissertation Abstracts International $g 76-01B(E).
790 $a 0059
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3634658