語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Silicon/silicon-germanium quantum do...
~
Yuan, Mingyun.
FindBook
Google Book
Amazon
博客來
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors./
作者:
Yuan, Mingyun.
面頁冊數:
116 p.
附註:
Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.
Contained By:
Dissertation Abstracts International76-01B(E).
標題:
Condensed matter physics. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3634658
ISBN:
9781321153088
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
Yuan, Mingyun.
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
- 116 p.
Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.
Thesis (Ph.D.)--Dartmouth College, 2013.
This item must not be sold to any third party vendors.
Si/SiGe quantum dots (QDs) are promising candidates for spin-based quantum bits (qubits) as a result of the reduced spin-orbit coupling as well as the Si isotopes with zero nuclear spin. Meanwhile, qubit readout is a challenge related to semiconductorbased quantum computation. A superconducting single-electron transistor (SET), when operating in the radio-frequency (rf) regime, has a combination of high charge sensitivity and low back-action and can potentially become an ideal charge sensor for the QDs.
ISBN: 9781321153088Subjects--Topical Terms:
3173567
Condensed matter physics.
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
LDR
:02093nmm a2200313 4500
001
2059847
005
20150827083006.5
008
170521s2013 ||||||||||||||||| ||eng d
020
$a
9781321153088
035
$a
(MiAaPQ)AAI3634658
035
$a
AAI3634658
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Yuan, Mingyun.
$3
3173982
245
1 0
$a
Silicon/silicon-germanium quantum dots with single-electron transistor charge sensors.
300
$a
116 p.
500
$a
Source: Dissertation Abstracts International, Volume: 76-01(E), Section: B.
500
$a
Adviser: Alexander J. Rimberg.
502
$a
Thesis (Ph.D.)--Dartmouth College, 2013.
506
$a
This item must not be sold to any third party vendors.
520
$a
Si/SiGe quantum dots (QDs) are promising candidates for spin-based quantum bits (qubits) as a result of the reduced spin-orbit coupling as well as the Si isotopes with zero nuclear spin. Meanwhile, qubit readout is a challenge related to semiconductorbased quantum computation. A superconducting single-electron transistor (SET), when operating in the radio-frequency (rf) regime, has a combination of high charge sensitivity and low back-action and can potentially become an ideal charge sensor for the QDs.
520
$a
This thesis describes the development of superconducting SET charge sensors for Si/SiGe QDs. Using rf-SETs we have detected real-time electron tunneling events on the order of 10 microseconds in a single QD and mapped out the stability diagram of a double QD, showing spin blockade and bias triangles due to excited-state transitions. In Addition, Kondo effects that are significantly different from the standard spin 1/2 model have been observed and investigated in both perpendicular and in-plane magnetic fields, indicating the interplay between the spin and valley degrees of freedom in Si.
590
$a
School code: 0059.
650
4
$a
Condensed matter physics.
$3
3173567
650
4
$a
Quantum physics.
$3
726746
650
4
$a
Physics.
$3
516296
690
$a
0611
690
$a
0599
690
$a
0605
710
2
$a
Dartmouth College.
$b
Physics and Astronomy.
$3
1036059
773
0
$t
Dissertation Abstracts International
$g
76-01B(E).
790
$a
0059
791
$a
Ph.D.
792
$a
2013
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3634658
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9292505
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入