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Growth and characterization of graph...

Tyagi, Parul.

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Growth and characterization of graphene on CuNi substrates.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and characterization of graphene on CuNi substrates./
作者:	Tyagi, Parul.
面頁冊數:	128 p.
附註:	Source: Dissertation Abstracts International, Volume: 75-09(E), Section: B.
Contained By:	Dissertation Abstracts International75-09B(E).
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3622540
ISBN:	9781303943539

Growth and characterization of graphene on CuNi substrates.
Tyagi, Parul.

Growth and characterization of graphene on CuNi substrates. - 128 p.

Source: Dissertation Abstracts International, Volume: 75-09(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2014.

This item must not be sold to any third party vendors.

Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer thick. In this research project, the growth of graphene on CuNi substrates has been studied. The presence of Ni in the alloy results in an increase in the catalytic activity of the surface. This results in lower deposition pressures than for pure Cu and also increases the carbon solubility, which allows the growth of films that are more than one atomic layer thick.

ISBN: 9781303943539Subjects--Topical Terms:

587832
Nanoscience.

Growth and characterization of graphene on CuNi substrates.
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245 1 0 $a Growth and characterization of graphene on CuNi substrates.
300 $a 128 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-09(E), Section: B.
500 $a Adviser: Carl A. Ventrice.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2014.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a Graphene is a single layer of sp2 bonded carbon atoms that crystallizes in the honeycomb structure. Because of its true two-dimensional structure, it has very unique electrical properties, including a very high carrier mobility that is symmetric for holes and electrons. To realize these unique properties, it is important to develop a method for growing graphene films with uniform thickness and low defect density. One of the most popular methods of growth is by chemical vapor deposition on Cu substrates, because it is self-limited. However many applications require the growth of graphene films that are more than one atomic layer thick. In this research project, the growth of graphene on CuNi substrates has been studied. The presence of Ni in the alloy results in an increase in the catalytic activity of the surface. This results in lower deposition pressures than for pure Cu and also increases the carbon solubility, which allows the growth of films that are more than one atomic layer thick.
520 $a Two types of substrates were used for the growth of the graphene films: CuNi foils with an alloy composition of 90:10 and 70:30 Cu-Ni by weight and a CuNi(111) single crystal with a composition of 90:10 by weight. For the 70:30 substrates, it was very difficult to control the graphene thickness. On the other hand, the controlled growth of graphene films that were more than one layer thick was achieved on the 90:10 substrates. The growth morphology and the crystal structure of graphene grown on the CuNi(111) surface was determined by performing these studies in an ultra-high vacuum chamber to achieve very high purity conditions. The low energy electron diffraction analysis of the graphene films showed that the graphene films always nucleated in more than one rotational orientation with respect to the substrate. The growth was achieved at temperatures as low as 500 °C, which is much lower in temperature than for Cu substrates. Scanning electron microscopy analysis of the graphene overlayer grown at 900 °C showed that the formation of graphene proceeds by a layer plus island (Stranski-Krastanov) growth mode.
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710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Science. $3 1685320
773 0 $t Dissertation Abstracts International $g 75-09B(E).
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792 $a 2014
793 $a English
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