東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

QUANTITATIVE ANALYSIS OF SEMICONDUCT...

CHU, PAUL KIM HO.

Linked to FindBook

Google Book

Amazon

博客來

QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY.

Record Type:	Electronic resources : Monograph/item
Title/Author:	QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY./
Author:	CHU, PAUL KIM HO.
Description:	160 p.
Notes:	Source: Dissertation Abstracts International, Volume: 43-07, Section: B, page: 2197.
Contained By:	Dissertation Abstracts International43-07B.
Subject:	Chemistry, Analytical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=8228374

QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY.
CHU, PAUL KIM HO.

QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY. - 160 p.

Source: Dissertation Abstracts International, Volume: 43-07, Section: B, page: 2197.

Thesis (Ph.D.)--Cornell University, 1982.

Secondary ion mass spectrometry (SIMS) is currently one of the most sensitive techniques for surface analysis. However, the quantification of SIMS results has been very difficult. Recently, the technique of ion implantation has been utilized to fabricate SIMS standards. In particular, the technique of solid state standard addition employing ion implants as internal standards is recognized as one of the best quantification schemes. One drawback of the solid state standard addition approach is, however, that the residual concentration to be measured must be relatively high. Utilizing Poisson statistics, computer integration is demonstrated to improve the detection limits of dopants in semiconductor materials by almost an order of magnitude.Subjects--Topical Terms:

586156
Chemistry, Analytical.

QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY.
LDR:02937nmm a2200277 4500 001 2055750
005 20150213104836.5
008 170521s1982 ||||||||||||||||| ||eng d
035 $a (MiAaPQ)AAI8228374
035 $a AAI8228374
040 $a MiAaPQ $c MiAaPQ
100 1 $a CHU, PAUL KIM HO. $3 3169445
245 1 0 $a QUANTITATIVE ANALYSIS OF SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY.
300 $a 160 p.
500 $a Source: Dissertation Abstracts International, Volume: 43-07, Section: B, page: 2197.
502 $a Thesis (Ph.D.)--Cornell University, 1982.
520 $a Secondary ion mass spectrometry (SIMS) is currently one of the most sensitive techniques for surface analysis. However, the quantification of SIMS results has been very difficult. Recently, the technique of ion implantation has been utilized to fabricate SIMS standards. In particular, the technique of solid state standard addition employing ion implants as internal standards is recognized as one of the best quantification schemes. One drawback of the solid state standard addition approach is, however, that the residual concentration to be measured must be relatively high. Utilizing Poisson statistics, computer integration is demonstrated to improve the detection limits of dopants in semiconductor materials by almost an order of magnitude.
520 $a The use of three dimensional image profiling in quantitative thin layer analysis is also elucidated. Stripe implants serving as image standards are shown to give results with accuracy similar to electron multiplier detection. The fabrication of flat plateau implants by multiple implantation is also demonstrated.
520 $a One of the biggest advantages of the solid state standard addition technique is the elimination of the SIMS matrix effect since the dopant of interest is compared to the standard in the same matrix. However, anomalous depth profiles have been observed for some implants in silicon making this direct comparison erroneous. This SIMS artifact and the proposed rectification scheme of matrix species ratio are illustrated.
520 $a Of equal importance is the understanding of the basic sputtering and ionization events. The recently proposed 'Unified Explanation for Secondary Ion Yields' postulates that ion yields are proportional to the implanted primary species concentration. Different primary gases have been examined for this purpose, and the data confirm the hypothesis. The effect of atomic mixing is investigated. The results show that while a heavier primary gas reduces atomic mixing, the difference is small if the primary energy is constant. In addition, studies of chemical enhancement and secondary ion mass spectra are presented.
590 $a School code: 0058.
650 4 $a Chemistry, Analytical. $3 586156
690 $a 0486
710 2 $a Cornell University. $3 530586
773 0 $t Dissertation Abstracts International $g 43-07B.
790 $a 0058
791 $a Ph.D.
792 $a 1982
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=8228374