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High-Quality Extended-Wavelength Mat...

Sharma, Ankur R.

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High-Quality Extended-Wavelength Materials for Optoelectronic Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	High-Quality Extended-Wavelength Materials for Optoelectronic Applications./
Author:	Sharma, Ankur R.
Description:	133 p.
Notes:	Source: Masters Abstracts International, Volume: 51-05.
Contained By:	Masters Abstracts International51-05(E).
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1534633
ISBN:	9781267953476

High-Quality Extended-Wavelength Materials for Optoelectronic Applications.
Sharma, Ankur R.

High-Quality Extended-Wavelength Materials for Optoelectronic Applications. - 133 p.

Source: Masters Abstracts International, Volume: 51-05.

Thesis (M.S.)--Arizona State University, 2013.

Photodetectors in the 1.7 to 4.0 mum range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 mum achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates.

ISBN: 9781267953476Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

High-Quality Extended-Wavelength Materials for Optoelectronic Applications.
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020 $a 9781267953476
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100 1 $a Sharma, Ankur R. $3 3168507
245 1 0 $a High-Quality Extended-Wavelength Materials for Optoelectronic Applications.
300 $a 133 p.
500 $a Source: Masters Abstracts International, Volume: 51-05.
500 $a Adviser: Shane Johnson.
502 $a Thesis (M.S.)--Arizona State University, 2013.
520 $a Photodetectors in the 1.7 to 4.0 mum range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 mum achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates.
520 $a One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 mum this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff.
520 $a Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030 /GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
590 $a School code: 0010.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Quantum. $3 1671062
690 $a 0544
690 $a 0794
690 $a 0599
710 2 $a Arizona State University. $b Electrical Engineering. $3 1671741
773 0 $t Masters Abstracts International $g 51-05(E).
790 $a 0010
791 $a M.S.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1534633