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Charge and spin transport in disorde...

Van Tuan, Dinh.

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Charge and spin transport in disordered graphene-based materials

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Charge and spin transport in disordered graphene-based materials/ by Dinh Van Tuan.
作者:	Van Tuan, Dinh.
出版者:	Cham :Springer International Publishing : : 2016.,
面頁冊數:	xvi, 153 p. :ill. (some col.), digital ;24 cm.
內容註:	Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.
Contained By:	Springer eBooks
標題:	Graphene. -
電子資源:	http://dx.doi.org/10.1007/978-3-319-25571-2
ISBN:	9783319255712$q(electronic bk.)

Charge and spin transport in disordered graphene-based materials
Van Tuan, Dinh.

Charge and spin transport in disordered graphene-based materials[electronic resource] /by Dinh Van Tuan. - Cham :Springer International Publishing :2016. - xvi, 153 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

ISBN: 9783319255712$q(electronic bk.)

Standard No.: 10.1007/978-3-319-25571-2doiSubjects--Topical Terms:

1569149
Graphene.

LC Class. No.: TA418.9.N35

Dewey Class. No.: 620.115

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