Defects and impurities in silicon ma...
Yoshida, Yutaka.

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  • Defects and impurities in silicon materials = an introduction to atomic-level silicon engineering /
  • 紀錄類型: 書目-電子資源 : Monograph/item
    正題名/作者: Defects and impurities in silicon materials/ edited by Yutaka Yoshida, Guido Langouche.
    其他題名: an introduction to atomic-level silicon engineering /
    其他作者: Yoshida, Yutaka.
    出版者: Tokyo :Springer Japan : : 2015.,
    面頁冊數: xv, 487 p. :ill. (some col.), digital ;24 cm.
    內容註: Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
    Contained By: Springer eBooks
    標題: Silicon. -
    電子資源: http://dx.doi.org/10.1007/978-4-431-55800-2
    ISBN: 9784431558002$q(electronic bk.)
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W9275677 電子資源 11.線上閱覽_V 電子書 EB TK7871.15.S55 D313 2015 一般使用(Normal) 在架 0
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