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Time and Temperature Dependence of V...

Mongkolsuttirat, Kittisun.

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Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films./
作者:	Mongkolsuttirat, Kittisun.
面頁冊數:	227 p.
附註:	Source: Dissertation Abstracts International, Volume: 74-05(E), Section: B.
Contained By:	Dissertation Abstracts International74-05B(E).
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3550468
ISBN:	9781267875662

Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films.
Mongkolsuttirat, Kittisun.

Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films. - 227 p.

Source: Dissertation Abstracts International, Volume: 74-05(E), Section: B.

Thesis (Ph.D.)--Lehigh University, 2013.

Radio frequency (RF) switches based on capacitive MicroElectroMechanical System (MEMS) devices have been proposed as replacements for traditional solid-state field effect transistor (FET) devices. However, one of the limitations of the existing capacitive switch designs is long-term reliability. Failure is generally attributed to electrical charging in the capacitor's dielectric layer that creates an attractive electrostatic force between a moving upper capacitor plate (a metal membrane) and the dielectric. This acts as an attractive stiction force between them that may cause the switch to stay permanently in the closed state. The force that is responsible for opening the switch is the elastic restoring force due to stress in the film membrane. If the restoring force decreases over time due to stress relaxation, the tendency for stiction failure behavior will increase. Au films have been shown to exhibit stress relaxation even at room temperature. The stress relaxation observed is a type of viscoelastic behavior that is more significant in thin metal films than in bulk materials.

ISBN: 9781267875662Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films.
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100 1 $a Mongkolsuttirat, Kittisun. $3 2106364
245 1 0 $a Time and Temperature Dependence of Viscoelastic Stress Relaxation in Gold and Gold Alloy Thin Films.
300 $a 227 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-05(E), Section: B.
500 $a Adviser: Richard P. Vinci.
502 $a Thesis (Ph.D.)--Lehigh University, 2013.
520 $a Radio frequency (RF) switches based on capacitive MicroElectroMechanical System (MEMS) devices have been proposed as replacements for traditional solid-state field effect transistor (FET) devices. However, one of the limitations of the existing capacitive switch designs is long-term reliability. Failure is generally attributed to electrical charging in the capacitor's dielectric layer that creates an attractive electrostatic force between a moving upper capacitor plate (a metal membrane) and the dielectric. This acts as an attractive stiction force between them that may cause the switch to stay permanently in the closed state. The force that is responsible for opening the switch is the elastic restoring force due to stress in the film membrane. If the restoring force decreases over time due to stress relaxation, the tendency for stiction failure behavior will increase. Au films have been shown to exhibit stress relaxation even at room temperature. The stress relaxation observed is a type of viscoelastic behavior that is more significant in thin metal films than in bulk materials.
520 $a Metal films with a high relaxation resistance would have a lower probability of device failure due to stress relaxation. It has been shown that solid solution and oxide dispersion can strengthen a material without unacceptable decreases in electrical conductivity. In this study, the viscoelastic behavior of Au, AuV solid solution and AuV2O5 dispersion created by DC magnetron sputtering are investigated using the gas pressure bulge testing technique in the temperature range from 20 to 80°C. The effectiveness of the two strengthening approaches is compared with the pure Au in terms of relaxation modulus and 3 hour modulus decay. The time dependent relaxation curves can be fitted very well with a four-term Prony series model. From the temperature dependence of the terms of the series, activation energies have been deduced to identify the possible dominant relaxation mechanism.
520 $a The measured modulus relaxation of Au films also proves that the films exhibit linear viscoelastic behavior. From this, a linear viscoelastic model is shown to fit very well to experimental steady state stress relaxation data and can predict time dependent stress for complex loading histories including the ability to predict stress-time behavior at other strain rates during loading.
520 $a Two specific factors that are expected to influence the viscoelastic behavior-degree of alloying and grain size are investigated to explore the influence of V concentration in solid solution and grain size of pure Au. It is found that the normalized modulus of Au films is dependent on both concentration (C) and grain size (D) with proportionalities of C1/3 and D 2, respectively. A quantitative model of the rate-equation for dislocation glide plasticity based on Frost and Ashby is proposed and fitted well with steady state anelastic stress relaxation experimental data.
520 $a The activation volume and the density of mobile dislocations is determined using repeated stress relaxation tests in order to further understand the viscoelastic relaxation mechanism. A rapid decrease of mobile dislocation density is found at the beginning of relaxation, which correlates well with a large reduction of viscoelastic modulus at the early stage of relaxation. The extracted activation volume and dislocation mobility can be ascribed to mobile dislocation loops with double kinks generated at grain boundaries, consistent with the dislocation mechanism proposed for the low activation energy measured in this study.
590 $a School code: 0105.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Mechanical. $3 783786
650 4 $a Chemistry, Inorganic. $3 517253
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710 2 $a Lehigh University. $b Mechanical Engineering. $3 1023892
773 0 $t Dissertation Abstracts International $g 74-05B(E).
790 $a 0105
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3550468