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Development of narrow gap semiconduc...

Wang, Ding.

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Development of narrow gap semiconductor materials and devices for optoelectronic applications.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Development of narrow gap semiconductor materials and devices for optoelectronic applications./
作者:	Wang, Ding.
面頁冊數:	73 p.
附註:	Source: Dissertation Abstracts International, Volume: 75-01(E), Section: B.
Contained By:	Dissertation Abstracts International75-01B(E).
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3598004
ISBN:	9781303463938

Development of narrow gap semiconductor materials and devices for optoelectronic applications.
Wang, Ding.

Development of narrow gap semiconductor materials and devices for optoelectronic applications. - 73 p.

Source: Dissertation Abstracts International, Volume: 75-01(E), Section: B.

Thesis (Ph.D.)--State University of New York at Stony Brook, 2013.

Mid-wave to long-wave infrared (3~12 mum in wavelength) optoelectronic devices have broad applications in gas sensing, molecular spectroscopy, imaging, environmental, industrial monitoring, etc. This work aims to explore new III-V materials and heterostructures to develop light emitting devices and detectors for the infrared spectral region.

ISBN: 9781303463938Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Development of narrow gap semiconductor materials and devices for optoelectronic applications.
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245 1 0 $a Development of narrow gap semiconductor materials and devices for optoelectronic applications.
300 $a 73 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-01(E), Section: B.
500 $a Advisers: Gregory Belenky; Dmitry Donetsky.
502 $a Thesis (Ph.D.)--State University of New York at Stony Brook, 2013.
520 $a Mid-wave to long-wave infrared (3~12 mum in wavelength) optoelectronic devices have broad applications in gas sensing, molecular spectroscopy, imaging, environmental, industrial monitoring, etc. This work aims to explore new III-V materials and heterostructures to develop light emitting devices and detectors for the infrared spectral region.
520 $a Optical properties of dilute nitride GaSbN and InAsN materials were investigated. We observed strong bandgap reduction with increasing nitrogen incorporation. GaSbN with 1.4% of nitrogen showed 300 meV narrower bandgap than GaSb; for InAsN the bandgap energy was reduced by 150 meV with nitrogen incorporation up to 2.25%. The carrier lifetimes within the picoseconds - nanoseconds range were measured for GaSbN and InAsN.
520 $a InAs1-xSbx alloys have the smallest bandgap energies within conventional III-V semiconductors. We demonstrated that growing compositionally graded buffers (Ga(Al)InSb on GaSb substrates) allows the fabrication of bulk unstrained and unrelaxed InAs1-xSbx layers with band gap energy as low as 120 meV. Photoluminescence spectra (5 -10 mum) and minority carrier lifetimes (up to 250 ns) were measured.
520 $a Light emitting diodes (LEDs) and photodetectors were fabricated using InAs1-xSbx alloys. LEDs with x = 0.2 and x = 0.4 demonstrated output powers of 90 muW at 5 mum and 8 muW at 8 mum respectively, at the temperature of 80 K. Barrier type photodetectors with InAs1-x Sbx (x = 0.4) absorber layer and AlInSb barrier were fabricated. Front side illuminated detectors with 1 mum thick absorber demonstrated an external quantum efficiency of 18 % at 8 mum at 150 K.
590 $a School code: 0771.
650 4 $a Engineering, Electronics and Electrical. $3 626636
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710 2 $a State University of New York at Stony Brook. $b Electrical Engineering. $3 1684468
773 0 $t Dissertation Abstracts International $g 75-01B(E).
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793 $a English
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