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Grain growth of gold nanowires throu...

Kim, Jung Yun.

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Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing./
作者:	Kim, Jung Yun.
面頁冊數:	94 p.
附註:	Source: Dissertation Abstracts International, Volume: 74-08(E), Section: B.
Contained By:	Dissertation Abstracts International74-08B(E).
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3557768
ISBN:	9781303015021

Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing.
Kim, Jung Yun.

Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing. - 94 p.

Source: Dissertation Abstracts International, Volume: 74-08(E), Section: B.

Thesis (Ph.D.)--University of California, Irvine, 2013.

The grain boundary density in metals plays an increasingly important role as structures are shrinking down to dimensions comparable to the electronic mean free path. Metal nanowires prepared through electron beam lithography, electrodeposition and many other methods are nanocrystalline with an average grain diameter in the range of 2--50 nm. For these nanocrystalline metal nanowires with a lateral dimensions larger than the mean grain diameter, the electrical resistance is dominated by electron scattering at the grain boundaries as opposed to the external surfaces and the background. The deleterious effect of grain boundaries on the electrical properties provides strong motivation to develop post-processing methods for increasing the mean grain diameter.

ISBN: 9781303015021Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing.
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245 1 0 $a Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing.
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500 $a Source: Dissertation Abstracts International, Volume: 74-08(E), Section: B.
500 $a Adviser: Martha Mecartney.
502 $a Thesis (Ph.D.)--University of California, Irvine, 2013.
520 $a The grain boundary density in metals plays an increasingly important role as structures are shrinking down to dimensions comparable to the electronic mean free path. Metal nanowires prepared through electron beam lithography, electrodeposition and many other methods are nanocrystalline with an average grain diameter in the range of 2--50 nm. For these nanocrystalline metal nanowires with a lateral dimensions larger than the mean grain diameter, the electrical resistance is dominated by electron scattering at the grain boundaries as opposed to the external surfaces and the background. The deleterious effect of grain boundaries on the electrical properties provides strong motivation to develop post-processing methods for increasing the mean grain diameter.
520 $a Thermal annealing has typically been used to induce grain growth. However, for metal nanowires patterned on a planar surface, a classic Rayleigh instability is observed resulting in decomposition of the nanowire to a periodic series of nanoparticles. In principle, grain growth requires short range motion of atoms while shape change requires mass displacement across large distances. Laser zone annealing was used to test whether the latter could be suppressed by rapidly heating a highly localized section of the wire followed by rapidly cooling. A piezoelectric motor was used to translate the wire at nanoscale steps over a 532 nm confocal laser source at range of power levels (2.5--10 mW) and translation rates (7--128 nm/s). Annealing at a laser power of 10 mW resulted in grain growth of nearly 300% from 27 nm to 85 nm.
520 $a A second approach to inhibit shape change while allowing for grain growth was to encapsulate the nanowire with an alumina layer to constrict large scale atomic diffusion during isothermal annealing. The alumina coating maintained the shape of the nanowire up to a temperature of &sim;669 K and grain growth approaching the limiting size was observed. To study the grain growth kinetics, in situ electrical resistance measurements of the nanowire were collected during annealing. Activation energies for grain boundary migration were calculated to be 24 kJ/mol (20 nm height) and 18 kJ/mol (40 nm height), well below the value 84.91 kJ/mol for coarse-grained bulk gold and comparable to values obtained for nanocrystalline thin films.
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