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Plasma-Enhanced Atomic Layer Deposit...

Gildea, Adam James.

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Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications./
作者:	Gildea, Adam James.
面頁冊數:	83 p.
附註:	Source: Masters Abstracts International, Volume: 52-02.
Contained By:	Masters Abstracts International52-02(E).
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1544764
ISBN:	9781303360954

Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications.
Gildea, Adam James.

Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications. - 83 p.

Source: Masters Abstracts International, Volume: 52-02.

Thesis (M.S.)--State University of New York at Albany, 2013.

Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger volume of a wire/via, leading to a decrease in line resistance and decrease in signal delay.

ISBN: 9781303360954Subjects--Topical Terms:

587832
Nanoscience.

Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications.
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245 1 0 $a Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications.
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500 $a Source: Masters Abstracts International, Volume: 52-02.
500 $a Adviser: Eric T. Eisenbraun.
502 $a Thesis (M.S.)--State University of New York at Albany, 2013.
520 $a Current interconnect networks in semiconductor processing utilize a sputtered TaN diffusion barrier, Ta liner, and Cu seed to improve the adhesion, microstructure, and electromigration resistance of electrochemically deposited copper that fills interconnect wires and vias. However, as wire/via widths shrink due to device scaling, it becomes increasingly difficult to have the volume of a wire/via be occupied with ECD Cu which increases line resistance and increases the delay in signal propagation in IC chips. A single layer that could serve the purpose of a Cu diffusion barrier and ECD Cu adhesion promoter could allow ECD Cu to occupy a larger volume of a wire/via, leading to a decrease in line resistance and decrease in signal delay.
520 $a Previous work has shown RuTaN, RuWCN, and RuCo films can act as Cu diffusion barriers and be directly platable to thickness of 2-3nm. However, other material selections may prove as effective or possibly better. Mixed-phase films of ruthenium titanium nitride grown by atomic layer deposition (ALD) were investigated for their performance as a Cu diffusion barrier and as a surface for the direct plating of ECD Cu. All Ru was deposited by plasma-enhanced atomic layer deposition (PEALD) while TiN was deposited by either thermal ALD or PEALD. RuTiN, films with thermal ALD TiN and a Ru:Ti of 20:1 showed barrier performance comparable to PVD TaN at 3-4 nm thickness and 15 nm planar films were directly platable. Follow up work is certainly needed for this material set, yet initial results indicate RuTiN could serve as an effective direct plate liner for Cu interconnects.
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