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Reliability of high mobility SiGe ch...

Franco, Jacopo.

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Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Reliability of high mobility SiGe channel MOSFETs for future CMOS applications/ by Jacopo Franco, Ben Kaczer, Guido Groeseneken.
作者:	Franco, Jacopo.
其他作者:	Kaczer, Ben.
出版者:	Dordrecht :Springer Netherlands : : 2014.,
面頁冊數:	xix, 187 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductor field-effect transistors - Reliability. -
電子資源:	http://dx.doi.org/10.1007/978-94-007-7663-0
ISBN:	9789400776630 (electronic bk.)

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Franco, Jacopo.

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications[electronic resource] /by Jacopo Franco, Ben Kaczer, Guido Groeseneken. - Dordrecht :Springer Netherlands :2014. - xix, 187 p. :ill., digital ;24 cm. - Springer Series in Advanced Microelectronics,v.471437-0387 ;. - Springer series in advanced microelectronics ;33..

ISBN: 9789400776630 (electronic bk.)Subjects--Topical Terms:

2055947
Metal oxide semiconductor field-effect transistors
--Reliability.

Dewey Class. No.: 621.3815284

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
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