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Finite element modeling for dislocat...

Zhu, Xinai.

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Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Finite element modeling for dislocation generation in semiconductor crystals grown from the melt./
作者:	Zhu, Xinai.
面頁冊數:	160 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0415.
Contained By:	Dissertation Abstracts International65-01B.
標題:	Engineering, Mechanical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3119998

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.
Zhu, Xinai.

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt. - 160 p.

Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0415.

Thesis (Ph.D.)--Florida Atlantic University, 2004.

Dislocations in Gallium Arsenide (GaAs) and Indium Phosphide (InP) single crystals are generated by excessive stresses that are induced during the crystal growth process, and the fabrication and packaging of microelectronic devices/circuits. TheSubjects--Topical Terms:

783786
Engineering, Mechanical.

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.
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520 $a GaAs and InP single crystals grown by the vertical gradient freeze (VGF) process were adopted as examples to study the influences of doping impurity and growth parameters on dislocations generated in these grown crystal. The calculated results s
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