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Silicon-based nanostructures and die...

Torrison, Levi.

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Silicon-based nanostructures and dielectrics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Silicon-based nanostructures and dielectrics./
作者:	Torrison, Levi.
面頁冊數:	148 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 4936.
Contained By:	Dissertation Abstracts International64-10B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3109621

Silicon-based nanostructures and dielectrics.
Torrison, Levi.

Silicon-based nanostructures and dielectrics. - 148 p.

Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 4936.

Thesis (Ph.D.)--Arizona State University, 2003.

A novel low-temperature (600--850°C), chemical vapor deposition (CVD) method, involving a simple reaction between disiloxane (H3Si-O-SiH 3) and ammonia (NH3), is described to deposit stoichiometric, Si2N2O and non-stoichiometric, SiO xNy, silicon oxynitride films as well as materials in the Si-Al-O-N-B system on Si substrates. The phase, composition and structure of these materials were characterized by Rutherford Backscattering (RBS), Transmission Electron Microscopy (TEM) and Infrared Spectroscopy (IR). The hardness and dielectric permittivity (K), for a 20 nm Si2N 2O film were determined to be 18 GPa and 6, respectively.Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Silicon-based nanostructures and dielectrics.
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100 1 $a Torrison, Levi. $3 1949006
245 1 0 $a Silicon-based nanostructures and dielectrics.
300 $a 148 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 4936.
500 $a Adviser: John Kouvetakis.
502 $a Thesis (Ph.D.)--Arizona State University, 2003.
520 $a A novel low-temperature (600--850°C), chemical vapor deposition (CVD) method, involving a simple reaction between disiloxane (H3Si-O-SiH 3) and ammonia (NH3), is described to deposit stoichiometric, Si2N2O and non-stoichiometric, SiO xNy, silicon oxynitride films as well as materials in the Si-Al-O-N-B system on Si substrates. The phase, composition and structure of these materials were characterized by Rutherford Backscattering (RBS), Transmission Electron Microscopy (TEM) and Infrared Spectroscopy (IR). The hardness and dielectric permittivity (K), for a 20 nm Si2N 2O film were determined to be 18 GPa and 6, respectively.
520 $a Luminescent Si nanocrystals imbedded in amorphous SiO2 and Si3N4 networks have been prepared using a new approach based on deposition of Si-rich Si-O and Si-N films by UHV-CVD reactions of the single-source precursors O(SiH3)2 and N(SiH 3)3 respectively. Rapid thermal annealing of the as-deposited films at 1100--1200°C for 30--60 seconds generates Si nanocrystals with tunable sizes, discrete shapes and uniform distributions. The phase, composition and microstructure of the films are characterized by a variety of analytical techniques including high-resolution electron microscopy. The room temperature photoluminescence (PL) is blue-shifted substantially with respect to pure Si and appears to be independent of the Si3N 4 and SiO2 dielectric medium. The PL energy increases with decreasing crystal size in accordance with quantum confinement concepts.
520 $a A novel single source precursor with composition D2GaN 3 is used to grow GaN films on Si(111) substrates via AIN buffer layers by gas source molecular beam epitaxy (DISLIMB). The morphological and optical properties of the films are determined as a function of the reaction conditions including deposition temperature. Noncrystalline GaN manipulators with faceted terminations are readily formed at unusually low temperatures of 275--300°C from the thermodynamically driven decomposition of the precursor via elimination of D2 and N2. Highly oriented layers with columnar morphology and wartiest microstructure are obtained between 450--750°C via basal plane growth. The photoluminescence (PL) and cathodoluminescence (CL) spectra of these materials display strong band edge emission peaks at 360 nm, and in some cases they show broad and weak luminescence features in the range of 530 to 550 nm.
590 $a School code: 0010.
650 4 $a Chemistry, Inorganic. $3 517253
690 $a 0488
710 2 0 $a Arizona State University. $3 1017445
773 0 $t Dissertation Abstracts International $g 64-10B.
790 1 0 $a Kouvetakis, John, $e advisor
790 $a 0010
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3109621