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The effect of hydrogen on high-field...

Lin, Hong.

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The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures.

Record Type:	Electronic resources : Monograph/item
Title/Author:	The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures./
Author:	Lin, Hong.
Description:	106 p.
Notes:	Source: Dissertation Abstracts International, Volume: 58-09, Section: B, page: 5015.
Contained By:	Dissertation Abstracts International58-09B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9807880
ISBN:	0591581604

The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures.
Lin, Hong.

The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures. - 106 p.

Source: Dissertation Abstracts International, Volume: 58-09, Section: B, page: 5015.

Thesis (Ph.D.)--The University of Alabama at Birmingham, 1997.

Silicon persists as the dominant semiconductor material of the present and the foreseeable future. Device scaling and low-voltage applications define the trend to ever-decreasing oxide thickness. Interface imperfection remains important as thickness decreases. A key factor in conventional SiO

ISBN: 0591581604Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures.
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100 1 $a Lin, Hong. $3 1948766
245 1 4 $a The effect of hydrogen on high-field-induced defects in the dielectric films of MOS structures.
300 $a 106 p.
500 $a Source: Dissertation Abstracts International, Volume: 58-09, Section: B, page: 5015.
500 $a Chair: Mary Ellen Zvanut.
502 $a Thesis (Ph.D.)--The University of Alabama at Birmingham, 1997.
520 $a Silicon persists as the dominant semiconductor material of the present and the foreseeable future. Device scaling and low-voltage applications define the trend to ever-decreasing oxide thickness. Interface imperfection remains important as thickness decreases. A key factor in conventional SiO $\ sb2 $ films subjected to an electric field is hydrogen. Interfacial hydrogen plays a significant role in many oxide degradation processes, and it is extremely hard to reduce the hydrogen concentration in any material. Therefore, hydrogen will remain a significant factor in MOS electronics as devices are scaled down.
520 $a Electrical measurements performed under a variety of conditions have addressed the effects of hydrogen present in as-grown devices and hydrogen intentionally introduced after processing. We used Fowler-Nordheim (F-N) high-field stress and C-V analysis to study an array of samples annealed in hydrogen and argon at different temperatures. Our results suggest that the near-interfacial trapped positive charge generated by high-field stress is particularly large in the 800 $\ sp\circ
520 $a By applying F-N stress to a metal-oxide-semiconductor capacitor, we studied the relationship between the hydrogen annealing temperatures and the near-interface trapped positive charge. Wet oxides annealed with hydrogen at temperatures between 400 $\ sp\circ $\ sp\circ $\ sp\circ
520 $a In addition to electrical studies, electron paramagnetic resonance (EPR) was employed to study the physical defects responsible for the trapped charge in hydrogenated films. The physical method used to incorporate the trapped charge in SiO $\ sb2 $ for EPR experiment is corona discharge. We found no direct correlation between the near-interface trapped charge from the F-N high-field injection and the E $\ sp\prime $ center density from the EPR experiment.
590 $a School code: 0005.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Molecular. $3 1018648
650 4 $a Physics, Electricity and Magnetism. $3 1019535
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690 $a 0609
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710 2 0 $a The University of Alabama at Birmingham. $3 1019443
773 0 $t Dissertation Abstracts International $g 58-09B.
790 1 0 $a Zvanut, Mary Ellen, $e advisor
790 $a 0005
791 $a Ph.D.
792 $a 1997
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9807880