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High-Q high-frequency CMOS bandpass ...

Lin, Fang.

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High-Q high-frequency CMOS bandpass filters for wireless applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	High-Q high-frequency CMOS bandpass filters for wireless applications./
Author:	Lin, Fang.
Description:	207 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.
Contained By:	Dissertation Abstracts International64-06B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3095737

High-Q high-frequency CMOS bandpass filters for wireless applications.
Lin, Fang.

High-Q high-frequency CMOS bandpass filters for wireless applications. - 207 p.

Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.

Thesis (Ph.D.)--Georgia Institute of Technology, 2003.

In this thesis, two 70MHz, Q of 350 monolithic Gm-C bandpass filters (BPF) with low power consumption are presented. The integrated BPFs are intended to replace the bulky and expensive surface-acoustic-wave (SAW) filter in many high-performance wireless applications such as GSM heterodyne receivers for channel selection purpose. A structure using a simple low-Q bandpass network in the positive feedback loop for Q-enhancement is proposed and analyzed as a promising method to realize high-frequency, high-Q, low-power bandpass filters. The basic concept of this structure is to use a positive feedback with a gain of less than 1 to enhance Q. In this structure, there are two methods to realize high-order Q-enhance filters: first, cascading the 2nd-order Q-enhanced stages; second, cascading the low-Q bandpass networks in the feedback loop. Comparing these two high-order realizations, the first one has better attenuation to the blockers while the second one has better Q-enhancement efficiency, noise, linearity, and dynamic range (DR). Two filters with center frequency of 70MHz and Q of 350 are designed by using these two high-order realizations, respectively. The filters are fabricated in 0.25μm CMOS technology for verification and comparison among the calculated, simulated, and experimental performance.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

High-Q high-frequency CMOS bandpass filters for wireless applications.
LDR:02165nmm 2200253 4500 001 1858783
005 20041020094117.5
008 130614s2003 eng d
035 $a (UnM)AAI3095737
035 $a AAI3095737
040 $a UnM $c UnM
100 1 $a Lin, Fang. $3 1946463
245 1 0 $a High-Q high-frequency CMOS bandpass filters for wireless applications.
300 $a 207 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.
500 $a Director: Phillip E. Allen.
502 $a Thesis (Ph.D.)--Georgia Institute of Technology, 2003.
520 $a In this thesis, two 70MHz, Q of 350 monolithic Gm-C bandpass filters (BPF) with low power consumption are presented. The integrated BPFs are intended to replace the bulky and expensive surface-acoustic-wave (SAW) filter in many high-performance wireless applications such as GSM heterodyne receivers for channel selection purpose. A structure using a simple low-Q bandpass network in the positive feedback loop for Q-enhancement is proposed and analyzed as a promising method to realize high-frequency, high-Q, low-power bandpass filters. The basic concept of this structure is to use a positive feedback with a gain of less than 1 to enhance Q. In this structure, there are two methods to realize high-order Q-enhance filters: first, cascading the 2nd-order Q-enhanced stages; second, cascading the low-Q bandpass networks in the feedback loop. Comparing these two high-order realizations, the first one has better attenuation to the blockers while the second one has better Q-enhancement efficiency, noise, linearity, and dynamic range (DR). Two filters with center frequency of 70MHz and Q of 350 are designed by using these two high-order realizations, respectively. The filters are fabricated in 0.25μm CMOS technology for verification and comparison among the calculated, simulated, and experimental performance.
590 $a School code: 0078.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a Georgia Institute of Technology. $3 696730
773 0 $t Dissertation Abstracts International $g 64-06B.
790 1 0 $a Allen, Phillip E., $e advisor
790 $a 0078
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3095737