語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Amidinate complexes of magnesium and...
~
Sadique, Azwana Rizan.
FindBook
Google Book
Amazon
博客來
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films./
作者:
Sadique, Azwana Rizan.
面頁冊數:
144 p.
附註:
Source: Dissertation Abstracts International, Volume: 64-03, Section: B, page: 1242.
Contained By:
Dissertation Abstracts International64-03B.
標題:
Chemistry, Inorganic. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3086469
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films.
Sadique, Azwana Rizan.
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films.
- 144 p.
Source: Dissertation Abstracts International, Volume: 64-03, Section: B, page: 1242.
Thesis (Ph.D.)--Wayne State University, 2003.
Magnesium-doped wide band gap semiconductors play a major role in electronic and opto-electronic devices. Metal Organic Chemical Vapor Deposition (MOCVD) techniques are widely used to dope magnesium into semiconductor films. Cyclopentadienyl based precursors are almost universally used to dope semiconductor films by MOCVD. Low vapor pressures of these compounds and the presence of direct metal-carbon bonds lead to uneven doping levels and carbon incorporation into the semiconductor matrix. Furthermore, there is a growing interest in new magnetic group 13–15 semiconductors as new materials, which combine the properties of both 13–15 semiconductors and ferromagnetic compounds. The low solubility of magnetic elements in group 13–15 semiconductors is the major obstacle in the preparation of these magnetic semiconductors. This problem could be overcome by using MOCVD methods.Subjects--Topical Terms:
517253
Chemistry, Inorganic.
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films.
LDR
:02278nmm 2200265 4500
001
1856887
005
20040723081433.5
008
130614s2003 eng d
035
$a
(UnM)AAI3086469
035
$a
AAI3086469
040
$a
UnM
$c
UnM
100
1
$a
Sadique, Azwana Rizan.
$3
1944639
245
1 0
$a
Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films.
300
$a
144 p.
500
$a
Source: Dissertation Abstracts International, Volume: 64-03, Section: B, page: 1242.
500
$a
Adviser: Charles H. Winter.
502
$a
Thesis (Ph.D.)--Wayne State University, 2003.
520
$a
Magnesium-doped wide band gap semiconductors play a major role in electronic and opto-electronic devices. Metal Organic Chemical Vapor Deposition (MOCVD) techniques are widely used to dope magnesium into semiconductor films. Cyclopentadienyl based precursors are almost universally used to dope semiconductor films by MOCVD. Low vapor pressures of these compounds and the presence of direct metal-carbon bonds lead to uneven doping levels and carbon incorporation into the semiconductor matrix. Furthermore, there is a growing interest in new magnetic group 13–15 semiconductors as new materials, which combine the properties of both 13–15 semiconductors and ferromagnetic compounds. The low solubility of magnetic elements in group 13–15 semiconductors is the major obstacle in the preparation of these magnetic semiconductors. This problem could be overcome by using MOCVD methods.
520
$a
This work is concerned with the development of new, improved magnesium source compounds and volatile first row transition metal compounds for use in MOCVD. The new source compounds are based on amidinato ligands. Highly volatile magnesium and first row transition metal amidinato complexes have been synthesized and completely characterized. All these compounds possess all-nitrogen coordination spheres around the metal center with minimal element content (preferred metal, C, H, and N).
590
$a
School code: 0254.
650
4
$a
Chemistry, Inorganic.
$3
517253
690
$a
0488
710
2 0
$a
Wayne State University.
$3
975058
773
0
$t
Dissertation Abstracts International
$g
64-03B.
790
1 0
$a
Winter, Charles H.,
$e
advisor
790
$a
0254
791
$a
Ph.D.
792
$a
2003
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3086469
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9175587
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入