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Ablation plasma ion implantation.
~
Qi, Bo.
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Ablation plasma ion implantation.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Ablation plasma ion implantation./
作者:
Qi, Bo.
面頁冊數:
167 p.
附註:
Source: Dissertation Abstracts International, Volume: 63-10, Section: B, page: 4871.
Contained By:
Dissertation Abstracts International63-10B.
標題:
Engineering, Nuclear. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3068944
ISBN:
0493886141
Ablation plasma ion implantation.
Qi, Bo.
Ablation plasma ion implantation.
- 167 p.
Source: Dissertation Abstracts International, Volume: 63-10, Section: B, page: 4871.
Thesis (Ph.D.)--University of Michigan, 2002.
The novel hybrid technique, Ablation Plasma Ion Implantation (APII), has been characterized and optimized for ion implantation and/or thin film deposition. In APII, a solid target is ablated by a laser; the resulting plasma plume is the source of ions, which are accelerated to high energy by a negative bias voltage imposed on the substrate. The ions are implanted into the substrate, and the neutral atoms in the ablation plume deposit on the substrate in the form of a thin film. Two configurations of APII are characterized and compared. The parallel target-substrate configuration yields ion-beam-assisted deposition and/or ion implantation, and the perpendicular target-substrate configuration yields pure ion implantation mode.
ISBN: 0493886141Subjects--Topical Terms:
1043651
Engineering, Nuclear.
Ablation plasma ion implantation.
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Source: Dissertation Abstracts International, Volume: 63-10, Section: B, page: 4871.
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Chairs: Ronald M. Gilgenbach; Yue-Ying Lau.
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Thesis (Ph.D.)--University of Michigan, 2002.
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The novel hybrid technique, Ablation Plasma Ion Implantation (APII), has been characterized and optimized for ion implantation and/or thin film deposition. In APII, a solid target is ablated by a laser; the resulting plasma plume is the source of ions, which are accelerated to high energy by a negative bias voltage imposed on the substrate. The ions are implanted into the substrate, and the neutral atoms in the ablation plume deposit on the substrate in the form of a thin film. Two configurations of APII are characterized and compared. The parallel target-substrate configuration yields ion-beam-assisted deposition and/or ion implantation, and the perpendicular target-substrate configuration yields pure ion implantation mode.
520
$a
A novel theory of the ion matrix sheath has been developed for APII. The ion current predicted by the Child-Langmuir sheath theory matches well with the experimental ion current. Two different target-substrate orientations have been compared for APII. Parallel target-substrate orientation yields ion-beam-assisted-deposition and ion implantation; to prevent arcing, a laser-voltage delay of several microseconds is required for this mode. For the optimized perpendicular target-substrate orientation, the laser can be fired during the voltage pulse, thereby accelerating ions to full energy. Furthermore, the ion dose is higher than that of the parallel target-substrate orientation by a factor of two. The parameters of plasma plumes have been thoroughly characterized by numerous diagnostics, which include electrical characteristics, optical emission spectroscopy, dye laser resonance absorption photography, resonant/non-resonant interferometry, and Langmuir probe. The total number of ions measured by Langmuir probe, and resonant interferometry, is in the range of 10<super>14</super> ions per laser pulse. Ion dose measured by plasma diagnostics, has been correlated to the ion dose obtained from material analysis, including sputtering yield calculation, X-ray Energy Dispersive Spectroscopy and X-ray Photoelectron Spectroscopy. The retained and delivered ion doses are in the range of 10<super> 12</super>/cm<super>2</super> per pulse, which is favorable compared to the ion dose obtained from conventional Plasma Immersion Ion Implantation (PHI). The APII ion implantation efficiency is estimated to be about 2%.
520
$a
Ion acceleration and implantation was demonstrated for both of the APB configurations. The feasibility of APII was verified by Cross-Sectional Transmission Electron Microscopy and X-ray Photoelectron Spectroscopy. For parallel target-substrate configuration, the average deposition rate is 0.0075 nm/shot for the Ti −10 kV APII film. Atomic Force Microscopy implemented at Timken Research Lab indicates that the −4 kV APII film has the smoothest surface. Scratch tests performed at Timken Research lab also prove that APR produces excellent film adhesion.
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School code: 0127.
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http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3068944
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