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Processing and properties of nitride...

Wang, Haiyan.

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Processing and properties of nitride-based thin film heterostructures.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Processing and properties of nitride-based thin film heterostructures./
作者:	Wang, Haiyan.
面頁冊數:	298 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5166.
Contained By:	Dissertation Abstracts International64-10B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3107801

Processing and properties of nitride-based thin film heterostructures.
Wang, Haiyan.

Processing and properties of nitride-based thin film heterostructures. - 298 p.

Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5166.

Thesis (Ph.D.)--North Carolina State University, 2002.

The goals of this work were to synthesize nitride-based thin film heterostructures by Pulsed Laser Deposition (PLD), study the structural, mechanical, electrical and optical properties of these heterostructures and establish the structure-property relations in order to further improve their properties and design new structures. Domain matching epitaxy was explored in most of these heterostructures.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Processing and properties of nitride-based thin film heterostructures.
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245 1 0 $a Processing and properties of nitride-based thin film heterostructures.
300 $a 298 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5166.
500 $a Chair: Jagdish Narayan.
502 $a Thesis (Ph.D.)--North Carolina State University, 2002.
520 $a The goals of this work were to synthesize nitride-based thin film heterostructures by Pulsed Laser Deposition (PLD), study the structural, mechanical, electrical and optical properties of these heterostructures and establish the structure-property relations in order to further improve their properties and design new structures. Domain matching epitaxy was explored in most of these heterostructures.
520 $a Mechanical and electrical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal were investigated. As the grain size decreased, the hardness of TiN films decreased (negative Hall-Petch relationship) and the resistivity of TiN increased.
520 $a High-quality epitaxial B1 NaCl-structured TaN films were deposited on Si(100) and Si(111) substrates with TiN buffer layer. The concepts of lattice-matching between TiN and TaN and domain-matching between TiN and silicon were explored. XRD, TEM, and STEM confirmed the single-crystalline nature of the films with cube-on-cube epitaxy. Diffusivity of copper in single-crystal (NaCl-structured) was investigated and compared with polycrystalline TaN films. The diffusion distances in epitaxial TaN are found to be about 5nm at 650°C for 30 min annealing.
520 $a Uniform TaXTi1−xN alloy (x = 30% & 70%) and TaN(3nm)/TiN(2nm) superlattice structure (x = 60%) were obtained by a special target assembly. Similarly, uniform AlxTi 1−xN alloys (x up to 70%) and highly aligned TiN/AlN (x > 70%) superlattices formed. TiN buffer layers were deposited to stabilize these cubic binary components. Microstructure and uniformity of these structures were studied by XRD, TEM and STEM, respectively. Nanoindentation results suggested high hardness of these binary composites and future hard coating applications. Electrical resistivity and Cu diffusion study prove TiN-TaN binary components to be a superior Cu diffusion barrier.
520 $a The eptaxial wurtzite AlN thin films were grown on (0001)α-Al 2O3 and Si(111) substrates. XRD, SAD and TEM revealed the epitaxial nature of AlN on (0001)α-Al2O3 and Si(111). Post-deposition annealing at 1300°C for 30mins can dramatically improve the quality of the AlN film on α-Al2O3. The interface structure and growth mechanism of AlN/Si(111) were studied by high-resolution X-TEM and Fourier filtered images. The domain matching epitaxy between a Si(110) and aAlN(2 1¯ 1¯ 0) is determined to be 4:5.
590 $a School code: 0155.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0794
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710 2 0 $a North Carolina State University. $3 1018772
773 0 $t Dissertation Abstracts International $g 64-10B.
790 1 0 $a Narayan, Jagdish, $e advisor
790 $a 0155
791 $a Ph.D.
792 $a 2002
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3107801