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Tracer diffusion studies on LCD glas...
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Tian, Lei.
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Tracer diffusion studies on LCD glass substrates and indium oxide.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Tracer diffusion studies on LCD glass substrates and indium oxide./
作者:
Tian, Lei.
面頁冊數:
168 p.
附註:
Source: Dissertation Abstracts International, Volume: 61-05, Section: B, page: 2712.
Contained By:
Dissertation Abstracts International61-05B.
標題:
Engineering, Materials Science. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9975224
ISBN:
0599807946
Tracer diffusion studies on LCD glass substrates and indium oxide.
Tian, Lei.
Tracer diffusion studies on LCD glass substrates and indium oxide.
- 168 p.
Source: Dissertation Abstracts International, Volume: 61-05, Section: B, page: 2712.
Thesis (Ph.D.)--Cornell University, 2000.
Silicate glass substrates and In2O3-based transparent electrodes are essential components for liquid crystal displays and other large area optoelectronic devices. Diffusional transport of impurity sodium ions between glass substrates and thin film electronic devices is a subject of great importance in the field of thin film electronics on glass. For a better understanding of the electrical properties of In2O 3-based thin film electrodes, the knowledge of the point defect structure and the ionic transport in In2O3 is necessary. This thesis addresses the diffusion of sodium ions in both silica glass and Corning Code 1737 glass, the role of dissolved water on the sodium mobility in these two glasses, and a novel approach for measuring the effectiveness of sodium diffusion barriers. Non-stoichiometry and cation tracer diffusion in In 2O3 are also considered in this thesis.
ISBN: 0599807946Subjects--Topical Terms:
1017759
Engineering, Materials Science.
Tracer diffusion studies on LCD glass substrates and indium oxide.
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Silicate glass substrates and In2O3-based transparent electrodes are essential components for liquid crystal displays and other large area optoelectronic devices. Diffusional transport of impurity sodium ions between glass substrates and thin film electronic devices is a subject of great importance in the field of thin film electronics on glass. For a better understanding of the electrical properties of In2O 3-based thin film electrodes, the knowledge of the point defect structure and the ionic transport in In2O3 is necessary. This thesis addresses the diffusion of sodium ions in both silica glass and Corning Code 1737 glass, the role of dissolved water on the sodium mobility in these two glasses, and a novel approach for measuring the effectiveness of sodium diffusion barriers. Non-stoichiometry and cation tracer diffusion in In 2O3 are also considered in this thesis.
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The diffusion of sodium in SiO2 glass and Corning Code 1737 glass was studied using the radioactive tracer Na-22. The temperature dependencies of the Na tracer diffusion coefficients in these two glasses are discussed. The Na tracer diffusion in SiO2 glass having been pre-annealed at high temperatures was found to be influenced by the content of water vapor in the pre-annealing atmosphere. The experimental results suggest that water diffuses into the glass during pre-annealing and generates a near-surface region with a Na diffusion rate lower than in the bulk. Similar results were also found for 1737 glass in which the Na diffusion profiles are influenced by the presence of water vapor in the atmosphere during the diffusion-anneal, suggesting that the formation of a near-surface region with a reduced Na diffusivity was caused by the incorporation of water into this glass.
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In order to determine the effectiveness of sodium diffusion barriers, the redistribution of Na tracer was studied in a diffusion couple consisting of two 1737 glass substrates and a thin barrier layer at the interface. A rate constant for the tracer transport across the interfacial barrier can be obtained from fitting experimentally measured redistribution profiles to a derived mathematical solution for the underlying diffusion problem. Different types of barrier layers were investigated by employing this approach.
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Finally, the deviation from stoichiometry, delta, in In2O 3--delta was studied thermogravimetrically as a function of the oxygen activity at 800°C. In addition, cation tracer diffusion coefficients, D*In and D*Sn were measured by using radioactive isotopes at 1400°C. The experimental results are discussed with regard to the point defect structure in In 2O3--delta.
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