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X-ray microdiffraction studies of me...

Valek, Bryan Charles.

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X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures./
作者:	Valek, Bryan Charles.
面頁冊數:	134 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-09, Section: B, page: 4570.
Contained By:	Dissertation Abstracts International64-09B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3104171
ISBN:	0496517392

X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures.
Valek, Bryan Charles.

X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures. - 134 p.

Source: Dissertation Abstracts International, Volume: 64-09, Section: B, page: 4570.

Thesis (Ph.D.)--Stanford University, 2003.

We present the development of an x-ray diffraction technique with submicron spatial resolution for the study of thin film structures. This technique is known as scanning white beam x-ray microdiffraction. A polychromatic synchrotron x-ray beam (energy range: 6--14 keV) is focused to a 0.8 x 0.8 mum spot using elliptically bent platinum mirrors in a Kirkpatrick-Baez configuration. Data are collected via a CCD in the form of Laue diffraction patterns from individual grains within the x-ray spot. Translation of the sample within the focal plane of the x-rays allows for the spatial mapping of grain orientation, grain structure, and deviatoric strain/stress within the sample. Data analysis techniques for the rapid analysis, indexing, and strain refinement of multiple Laue patterns are also presented.

ISBN: 0496517392Subjects--Topical Terms:

1017759
Engineering, Materials Science.

X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures.
LDR:03316nmm 2200301 4500 001 1843935
005 20051017073416.5
008 130614s2003 eng d
020 $a 0496517392
035 $a (UnM)AAI3104171
035 $a AAI3104171
040 $a UnM $c UnM
100 1 $a Valek, Bryan Charles. $3 1932146
245 1 0 $a X-ray microdiffraction studies of mechanical behavior and electromigration in thin film structures.
300 $a 134 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-09, Section: B, page: 4570.
500 $a Adviser: John C. Bravman.
502 $a Thesis (Ph.D.)--Stanford University, 2003.
520 $a We present the development of an x-ray diffraction technique with submicron spatial resolution for the study of thin film structures. This technique is known as scanning white beam x-ray microdiffraction. A polychromatic synchrotron x-ray beam (energy range: 6--14 keV) is focused to a 0.8 x 0.8 mum spot using elliptically bent platinum mirrors in a Kirkpatrick-Baez configuration. Data are collected via a CCD in the form of Laue diffraction patterns from individual grains within the x-ray spot. Translation of the sample within the focal plane of the x-rays allows for the spatial mapping of grain orientation, grain structure, and deviatoric strain/stress within the sample. Data analysis techniques for the rapid analysis, indexing, and strain refinement of multiple Laue patterns are also presented.
520 $a The capabilities of the x-ray microdiffraction technique are demonstrated by studying the local microstructural and mechanical properties of Al (0.5wt.% Cu) thin film structures. Maps of local grain structure, orientation, and deviatoric stress in 4.1 and 0.7 pin wide passivated interconnect lines show highly inhomogeneous local properties. Thermal cycling of an Al(Cu) bond pad provides insight into the relation between local and macroscopic stresses.
520 $a Electromigration in metallic interconnect lines is a reliability issue of particular concern to the chip industry and has been the subject of intensive study. The scanning white beam x-ray microdiffraction technique is used to study microstructural evolution in Al(Cu) interconnect lines during in-situ electromigration tests. An unusual mode of plastic deformation has been discovered. The data show plastic deformation and grain rotations occurring under the influence of electromigration. This is seen as broadening, movement, and splitting of Laue reflections diffracted from individual metal grains. Gradients in the plastic deformation behavior are seen along the length of a line, decreasing from the cathode towards the anode. A model for this unexpected behavior has been developed. The model states that stress that arises due to diffusion of vacancies into the grains from interfaces and grain boundaries is relieved by the introduction and motion of dislocations from the bottom surface of the interconnect. The model accounts for the observed concave deformation and grain rotations seen within a line.
590 $a School code: 0212.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Metallurgy. $3 1023648
690 $a 0794
690 $a 0743
710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 64-09B.
790 1 0 $a Bravman, John C., $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3104171