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Optical microcharacterization of gal...

Srinivasan, Sridhar.

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Optical microcharacterization of gallium nitride and indium gallium nitride alloys.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Optical microcharacterization of gallium nitride and indium gallium nitride alloys./
Author:	Srinivasan, Sridhar.
Description:	110 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5164.
Contained By:	Dissertation Abstracts International64-10B.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3109612
ISBN:	0496571539

Optical microcharacterization of gallium nitride and indium gallium nitride alloys.
Srinivasan, Sridhar.

Optical microcharacterization of gallium nitride and indium gallium nitride alloys. - 110 p.

Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5164.

Thesis (Ph.D.)--Arizona State University, 2003.

Gallium Nitride (GaN) and its alloys are attractive candidate materials for light-emitting applications in the visible and ultraviolet regions of the electromagnetic spectrum. The wide direct bandgap of the III-nitrides makes them very efficient

ISBN: 0496571539Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Optical microcharacterization of gallium nitride and indium gallium nitride alloys.
LDR:01138nmm 2200277 4500 001 1841989
005 20050916110237.5
008 130614s2003 eng d
020 $a 0496571539
035 $a (UnM)AAI3109612
035 $a AAI3109612
040 $a UnM $c UnM
100 1 $a Srinivasan, Sridhar. $3 1930264
245 1 0 $a Optical microcharacterization of gallium nitride and indium gallium nitride alloys.
300 $a 110 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5164.
500 $a Adviser: Fernando Ponce.
502 $a Thesis (Ph.D.)--Arizona State University, 2003.
520 $a Gallium Nitride (GaN) and its alloys are attractive candidate materials for light-emitting applications in the visible and ultraviolet regions of the electromagnetic spectrum. The wide direct bandgap of the III-nitrides makes them very efficient
590 $a School code: 0010.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0794
690 $a 0611
710 2 0 $a Arizona State University. $3 1017445
773 0 $t Dissertation Abstracts International $g 64-10B.
790 1 0 $a Ponce, Fernando, $e advisor
790 $a 0010
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3109612