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The characterization of octafluorocy...

Barela, Marcos J.

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The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films.

Record Type:	Electronic resources : Monograph/item
Title/Author:	The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films./
Author:	Barela, Marcos J.
Description:	140 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5632.
Contained By:	Dissertation Abstracts International64-11B.
Subject:	Engineering, Chemical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3112355
ISBN:	049659883X

The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films.
Barela, Marcos J.

The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films. - 140 p.

Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5632.

Thesis (Ph.D.)--The University of New Mexico, 2003.

Utilizing IRDLAS, and Langmuir probe measurements; we were able to demonstrate that C2F4 and CF2 are the main dissociation products in a C4F8 plasma discharge. Under conditions of energetic ion bombardment, C2F4 and CF2 are consumed at the wafer surface. Increases in ion energy increase the rate of consumption of C2F4 and CF2, resulting in increased SiO2 etch rates.

ISBN: 049659883XSubjects--Topical Terms:

1018531
Engineering, Chemical.

The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films.
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100 1 $a Barela, Marcos J. $3 1925713
245 1 4 $a The characterization of octafluorocyclobutane-based plasma discharges for the selective etching and processing of silicon dioxide and low-K dielectric thin films.
300 $a 140 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5632.
500 $a Adviser: Harold Anderson.
502 $a Thesis (Ph.D.)--The University of New Mexico, 2003.
520 $a Utilizing IRDLAS, and Langmuir probe measurements; we were able to demonstrate that C2F4 and CF2 are the main dissociation products in a C4F8 plasma discharge. Under conditions of energetic ion bombardment, C2F4 and CF2 are consumed at the wafer surface. Increases in ion energy increase the rate of consumption of C2F4 and CF2, resulting in increased SiO2 etch rates.
520 $a The addition of Ar to the C4F8 discharge increased the ion flux in the discharge. The increased ion flux reduced the thickness of the fluorocarbon film, thus enhancing etch rates. During these experiments we were able to monitor SiF2 using UV-Vis absorption. From these experiments we determined that SiF2 is an important etch product of the SiO 2 etching process, due to its presence in high concentrations in the discharge.
520 $a By using IRDLAS and XPS we were able to correlate changes in the surface chemistry during etching with changes in the neutral radical densities as a function of Ar addition to the discharge. The results of these experiments provided further evidence the ion energy, ion flux, and neutral radical flux all have important roles in the selective etch mechanism. Using the results from a parametric study we performed, we found that the roles of the ion energy, ion flux, and neutral radical flux are valid over a wide range of parameters. Additionally, by performing these studies on two different reactor platforms, we determined that our findings are not reactor dependent.
520 $a We have shown that fluorocarbon plasmas can be used to modify the pore surface of porous silica. This modification process allowed us to decrease the dielectric constant of the porous silica film by the replacement of hydroxyl groups on the pore surface with fluorine. The plasma modified films allowed us greater control of the etch process, as was shown by the comparison of patterned plasma modified and as prepared EISA porous silica films.
520 $a We have shown that hydroxyl radicals on the pore surface inhibit etching. We speculate that the hydroxyl radicals scavenge fluorine from the fluorocarbon layer, thereby rendering the film F-deficient. Due to this process surfaces with high hydroxyl concentrations required high ion energy to break through this layer and etch the underlying substrate. Conversely, pore surfaces where a fraction of the hydroxyl radicals have been replaced by fluorine enhance etching. We speculate both the reduction in the hydroxyl radicals and addition of fluorine allows the formation of a F-rich fluorocarbon layer. Due to the high surface area of the porous films, an increased amount of C2F 4 and CF2 were consumed, compared with SiO2 , thus the enhancement of the etch rate.
590 $a School code: 0142.
650 4 $a Engineering, Chemical. $3 1018531
650 4 $a Physics, Fluid and Plasma. $3 1018402
690 $a 0542
690 $a 0759
710 2 0 $a The University of New Mexico. $3 1018024
773 0 $t Dissertation Abstracts International $g 64-11B.
790 1 0 $a Anderson, Harold, $e advisor
790 $a 0142
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3112355