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LEDs based on III-nitride quantum do...

Xu, Tao.

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LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy./
作者:	Xu, Tao.
面頁冊數:	177 p.
附註:	Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1879.
Contained By:	Dissertation Abstracts International68-03B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3254482

LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy.
Xu, Tao.

LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy. - 177 p.

Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1879.

Thesis (Ph.D.)--Boston University, 2007.

The research described in this dissertation addresses the study of materials issues related to the growth and characterization of nitride semiconductor quantum wells (QWs) and quantum dots (QDs) and their application to blue-green and ultra-violet light emitting diodes (LEDs).Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy.
LDR:03519nmm 2200289 4500 001 1834515
005 20071119145709.5
008 130610s2007 eng d
035 $a (UMI)AAI3254482
035 $a AAI3254482
040 $a UMI $c UMI
100 1 $a Xu, Tao. $3 1059048
245 1 0 $a LEDs based on III-nitride quantum dots and quantum wells grown by molecular beam epitaxy.
300 $a 177 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-03, Section: B, page: 1879.
500 $a Adviser: Theodore D. Moustakas.
502 $a Thesis (Ph.D.)--Boston University, 2007.
520 $a The research described in this dissertation addresses the study of materials issues related to the growth and characterization of nitride semiconductor quantum wells (QWs) and quantum dots (QDs) and their application to blue-green and ultra-violet light emitting diodes (LEDs).
520 $a The materials component involves the study of the growth of self-assembled gallium nitride (GaN), indium nitride (InN) and indium gallium nitride (InGaN) QDs by plasma-assisted molecular beam epitaxy. The growth of the QDs was monitored by reflection high energy electron diffraction (RHEED). The QD morphology and microstructure were studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), while the QD emission properties were studied by cathodoluminescence spectroscopy. GaN QDs grown on an aluminum nitride (AlN) buffer follow the classical pattern of the Stranski-Krastanov mode, where the formation of a two dimensional layer is followed by the formation of GaN QDs. AFM studies indicate that the GaN QDs on AlN have a density of the order of 1011/cm2 and have a bimodal size distribution, with the larger size QDs dominating as the number of deposited monolayers increases. Contrary to GaN QDs grown on AlN, TEM studies show InN QDs grown on a GaN buffer to be fully relaxed, a result attributed to the larger lattice mismatch between GaN and InN (Volmer-Weber Mode). The formation of InGaN QDs on a GaN buffer is more difficult and the mode of growth should depend on InN mole fraction. AFM studies indicate that InGaN QDs with up to 40% InN mole fraction are formed on a GaN buffer, and their density and size depend strongly on deposition temperature. It was found that the cathodoluminescence emission spectra are significantly red shifted in multiple layers of InGaN/GaN quantum dots (MQDs), a result attributed to Quantum Confined Stark effect due to the additional stress on QDs by the GaN barriers.
520 $a LED structures based on InGaN/GaN multiple quantum wells (MQWs) and emitting at 440 nm were grown with or without GaN QDs in the nucleation layer. TEM studies found that the inclusion of QDs in the nucleation layer acts as a dislocation filtering mechanism leading to superior devices. Green and red LEDs based on InGaN MQDs emitting at 560 nm and 640 nm, respectively, were grown. Such structures were fabricated into 800 mum x 800 mum LED devices using standard photolithography and metallization schemes. The electroluminescence spectra of these devices were investigated as a function of injection current, and bare-die blue LEDs with total power output of 4.5 mW have been obtained.
590 $a School code: 0017.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0544
690 $a 0794
710 2 0 $a Boston University. $3 1017454
773 0 $t Dissertation Abstracts International $g 68-03B.
790 1 0 $a Moustakas, Theodore D., $e advisor
790 $a 0017
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3254482