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Fabrication and site specific growth...

Wu, Chun-I.

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Fabrication and site specific growth of nanowires.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Fabrication and site specific growth of nanowires./
作者:	Wu, Chun-I.
面頁冊數:	229 p.
附註:	Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2766.
Contained By:	Dissertation Abstracts International67-05B.
標題:	Chemistry, General. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3216187
ISBN:	9780542687938

Fabrication and site specific growth of nanowires.
Wu, Chun-I.

Fabrication and site specific growth of nanowires. - 229 p.

Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2766.

Thesis (Ph.D.)--Michigan State University, 2006.

Nanotechnology has the promise to affect many areas of study including structural, materials, biological, and electrical sensors and circuits. In this presentation, fabrication routes to growing whiskers and nanowires of various materials will be presented. The materials investigated include gallium arsenide (GaAs), indium antimonide (InSb), a clathrate material Sr 8Ga16Ge30, and germanium (Ge). The experiments were designed to utilize the vapor-liquid-solid (VLS) growth mechanism, where a metal catalyst is used to mitigate the growth of the nanowires. The results for germanium, however, show a strong enhancement of growth upon the exposure of the samples to air while at the growth temperature. The role of oxide assisted (OA) growth in combination with the VLS mechanism will be discussed.

ISBN: 9780542687938Subjects--Topical Terms:

1021807
Chemistry, General.

Fabrication and site specific growth of nanowires.
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245 1 0 $a Fabrication and site specific growth of nanowires.
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500 $a Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2766.
500 $a Adviser: Tim Hogan.
502 $a Thesis (Ph.D.)--Michigan State University, 2006.
520 $a Nanotechnology has the promise to affect many areas of study including structural, materials, biological, and electrical sensors and circuits. In this presentation, fabrication routes to growing whiskers and nanowires of various materials will be presented. The materials investigated include gallium arsenide (GaAs), indium antimonide (InSb), a clathrate material Sr 8Ga16Ge30, and germanium (Ge). The experiments were designed to utilize the vapor-liquid-solid (VLS) growth mechanism, where a metal catalyst is used to mitigate the growth of the nanowires. The results for germanium, however, show a strong enhancement of growth upon the exposure of the samples to air while at the growth temperature. The role of oxide assisted (OA) growth in combination with the VLS mechanism will be discussed.
520 $a Nanowires of GaAs, InSb, and Sr8Ga16Ge30 showed compositions that were deficient in the more volatile elements. Volume confinement studies will also be presented for the clathrate material.
520 $a Growth of germanium dioxide (GeO2) whiskers and nanowires was found to be highly selective to the locations of the metal catalyst (gold). Examples of site specific growth of the GeO2 wires will be presented to show nanobridges on silicon substrates, and nanowire bundles inside tapered micropipette structures. The growth technique is relatively simple, and applicable for scaleup procedures. Images of the whiskers and nanowires were taken with SEM and TEM.
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