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Micromachined sensor for stress meas...

Zhang, Ping.

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Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications./
作者:	Zhang, Ping.
面頁冊數:	160 p.
附註:	Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5313.
Contained By:	Dissertation Abstracts International67-09B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3235386
ISBN:	9780542896231

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications.
Zhang, Ping.

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications. - 160 p.

Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5313.

Thesis (Ph.D.)--Stanford University, 2006.

Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components.

ISBN: 9780542896231Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications.
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245 1 0 $a Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications.
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500 $a Adviser: John C. Bravman.
502 $a Thesis (Ph.D.)--Stanford University, 2006.
520 $a Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components.
520 $a An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored.
520 $a RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection.
520 $a While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy) sample preparation technique allows the investigation of the microstructures of these thin films both before and after mechanical testing to correlate the microstructural findings with the mechanical behavior. Major studies include grain boundary strengthening in pure Al, plastic deformation in pure Al by inhomogeneous deformation and localized grain thinning, solid solution and precipitate strengthening in Al-Ti alloys, and stress relaxation of Al and Al-Ti.
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791 $a Ph.D.
792 $a 2006
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