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Surface modification for area select...

Chen, Rong.

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Surface modification for area selective atomic layer deposition on silicon and germanium.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Surface modification for area selective atomic layer deposition on silicon and germanium./
作者:	Chen, Rong.
面頁冊數:	216 p.
附註:	Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2569.
Contained By:	Dissertation Abstracts International67-05B.
標題:	Chemistry, Physical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3219246
ISBN:	9780542705847

Surface modification for area selective atomic layer deposition on silicon and germanium.
Chen, Rong.

Surface modification for area selective atomic layer deposition on silicon and germanium. - 216 p.

Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2569.

Thesis (Ph.D.)--Stanford University, 2006.

Atomic layer deposition (ALD) is a powerful ultra-thin film deposition method that employs sequential self-terminating surface reaction steps. Typically, the process permits nano-scale control of materials in the vertical direction. To develop the method for three-dimensional control of materials, we have been investigating an area-selective ALD technique which may ultimately enable nano-scale definition laterally. By manipulating the surface functional groups prior to ALD, we demonstrate an area-selective ALD process for both dielectrics (e.g. HfO, and ZrO2 high-kappa materials) and metals (e.g. Pt).

ISBN: 9780542705847Subjects--Topical Terms:

560527
Chemistry, Physical.

Surface modification for area selective atomic layer deposition on silicon and germanium.
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245 1 0 $a Surface modification for area selective atomic layer deposition on silicon and germanium.
300 $a 216 p.
500 $a Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2569.
500 $a Adviser: Stacey F. Bent.
502 $a Thesis (Ph.D.)--Stanford University, 2006.
520 $a Atomic layer deposition (ALD) is a powerful ultra-thin film deposition method that employs sequential self-terminating surface reaction steps. Typically, the process permits nano-scale control of materials in the vertical direction. To develop the method for three-dimensional control of materials, we have been investigating an area-selective ALD technique which may ultimately enable nano-scale definition laterally. By manipulating the surface functional groups prior to ALD, we demonstrate an area-selective ALD process for both dielectrics (e.g. HfO, and ZrO2 high-kappa materials) and metals (e.g. Pt).
520 $a Our approach is to chemically modify the substrate surface in order to impart spatial selectivity to ALD. We have investigated several different types of self-assembled monolayers (SAMs) as resists against ALD. Oxide-coated substrates (e.g. SiO2) have been protected using organosilane-based SAMs by silylation reaction; hydrogen-terminated Si (Si-H) and hydrogen-terminated Ge (Ge-H) protected by reaction with 1-alkenes or 1-alkynes via hydrosilylation and hydrogermylation, respectively. We have followed the SAM properties as a function of molecular structure and formation time using several experimental techniques and have correlated the properties of the SAMs with their efficacy as ALD resists for both classes of monolayers.
520 $a With the successful ALD resists, area-selective ALD has been carried out using different patterning methods to define the lateral structure. Both micro-contact printing of SAMs and selective functionalization of a SiO2/Si structure by SAMs have been used to achieve area-selective ALD of HfOts2 and Pt films. We have compared the selectivity between these methods, and have described the differences in the context of the SAM resist requirements. We have also shown that by choosing either silylation- or hydrosilylation-based chemical functionalization, a single patterned oxide substrate can be used for either positive or negative pattern transfer into the ALD film.
520 $a The ability to achieve area-selective ALD for both dielectrics and metals enables potential gate stack fabrication. Simple capacitors were fabricated using area-selective ALD and their electrical performance was measured. The comparison of HfO2 electrical characteristics by different surface treatments prior to ALD suggested further surface and interface modifications are important to achieve better electrical performance.
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650 4 $a Engineering, Materials Science. $3 1017759
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710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 67-05B.
790 1 0 $a Bent, Stacey F., $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 2006
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