東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Development of a solid-state quantum...

Park, Sang Joon.

FindBook

Google Book

Amazon

博客來

Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation./
作者:	Park, Sang Joon.
面頁冊數:	104 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-02, Section: B, page: 1147.
Contained By:	Dissertation Abstracts International66-02B.
標題:	Engineering, Nuclear. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3165517
ISBN:	9780542009938

Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation.
Park, Sang Joon.

Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation. - 104 p.

Source: Dissertation Abstracts International, Volume: 66-02, Section: B, page: 1147.

Thesis (Ph.D.)--University of California, Berkeley, 2004.

A proposal to manipulate phosphorous quantum bits in silicon has been studied as a new concept of the next generation computing. Quantum information systems in a silicon structure have a lot of advantages in terms of the scalability and the usage of advanced silicon technology. We studied solid-state quantum bit (qubit) schemes of dual phosphorous atom interactions in the crystalline silicon matrix. In this thesis, the developmental processes and the results from this study will be shown. This experimental approach includes a single ion implantation scheme into a registered position using highly charged ion sources and a single electron transistor read-out scheme using nanowires based on silicon fabrication technology.

ISBN: 9780542009938Subjects--Topical Terms:

1043651
Engineering, Nuclear.

Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation.
LDR:02810nmm 2200301 4500 001 1823312
005 20061201131705.5
008 130610s2004 eng d
020 $a 9780542009938
035 $a (UnM)AAI3165517
035 $a AAI3165517
040 $a UnM $c UnM
100 1 $a Park, Sang Joon. $3 1912425
245 1 0 $a Development of a solid-state quantum computer: Single electron transistors and highly charged ion implantation.
300 $a 104 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-02, Section: B, page: 1147.
500 $a Chair: Jasmina Vujic.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2004.
520 $a A proposal to manipulate phosphorous quantum bits in silicon has been studied as a new concept of the next generation computing. Quantum information systems in a silicon structure have a lot of advantages in terms of the scalability and the usage of advanced silicon technology. We studied solid-state quantum bit (qubit) schemes of dual phosphorous atom interactions in the crystalline silicon matrix. In this thesis, the developmental processes and the results from this study will be shown. This experimental approach includes a single ion implantation scheme into a registered position using highly charged ion sources and a single electron transistor read-out scheme using nanowires based on silicon fabrication technology.
520 $a Firstly, the single ion implantation scheme is based on slow (slower than the Bohr velocity: v < vBohr = 2.2 x 106 m/s) highly charged ions (SHCIs) extracted from the Electron Beam Ion Trap (EBIT) at the Lawrence Berkeley National Lab (LBNL). HCIs lose their electrons in an ion trap coupled with a high current density electron beam. An ion with few electrons can have a potential energy in a range of &sim;10 to &sim;100 keV The ion releases its potential energy in a time scale of &sim;10 femto seconds (ultra-fast interaction) on a solid surface. This effect leads to electron emissions from the surface, which is proportional to the released potential energy. Hence, the efficiency of detecting single ions is higher than for singly-charged ions.
520 $a Secondly, we have formed 10--30 nm wires on a silicon wafer as a sensor to detect the phosphorous atom interactions inside the silicon solid matrix. Electron beam lithography (EBL) technology can pattern the wire size down to &sim;10 nm scale. In this device, the sensitivity of a nanowire plays an important role in implementing the solid-state quantum computer.
590 $a School code: 0028.
650 4 $a Engineering, Nuclear. $3 1043651
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0552
690 $a 0544
710 2 0 $a University of California, Berkeley. $3 687832
773 0 $t Dissertation Abstracts International $g 66-02B.
790 1 0 $a Vujic, Jasmina, $e advisor
790 $a 0028
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3165517